| 6500757 |
Method and apparatus for controlling grain growth roughening in conductive stacks |
Jeffrey A. Shields |
2002-12-31 |
| 6444593 |
Surface treatment of low-K SiOF to prevent metal interaction |
Minh Van Ngo, Richard J. Huang |
2002-09-03 |
| 6436850 |
Method of degassing low k dielectric for metal deposition |
— |
2002-08-20 |
| 6420104 |
Method of reducing contact size by spacer filling |
Bharath Rangarajan, Stephen Keetai Park |
2002-07-16 |
| 6380556 |
Test structure used to measure metal bottom coverage in trenches and vias/contacts and method for creating the test structure |
David Bang, Takeshi Nogami, Shekhar Pramanick |
2002-04-30 |
| 6335273 |
Surface treatment of low-K SiOF to prevent metal interaction |
Richard J. Huang, Simon S. Chan |
2002-01-01 |
| 6335533 |
Electron microscopy sample having silicon nitride passivation layer |
Dawn Hopper, Lu You |
2002-01-01 |
| 6281584 |
Integrated circuit with improved adhesion between interfaces of conductive and dielectric surfaces |
Minh Van Ngo, Richard J. Huang |
2001-08-28 |
| 6281121 |
Damascene metal interconnects using highly directional deposition of barrier and/or seed layers including (III) filling metal |
Dirk Brown, Takeshi Nogami |
2001-08-28 |
| 6265273 |
Method of forming rectangular shaped spacers |
Steven C. Avanzino, Stephen Keetai Park, Bharath Rangarajan, Jeffrey A. Shields, Larry Wang |
2001-07-24 |
| 6265294 |
Integrated circuit having double bottom anti-reflective coating layer |
Stephen Keetai Park, Bharath Rangarajan, Jeff Shields |
2001-07-24 |
| 6235632 |
Tungsten plug formation |
Takeshi Nogami, Minh Van Ngo |
2001-05-22 |
| 6211074 |
Methods and arrangements for reducing stress and preventing cracking in a silicide layer |
Richard J. Huang |
2001-04-03 |
| 6177345 |
Method of silicide film formation onto a semiconductor substrate |
Jianshi Wang, Judith Quan Rizzuto, Hao Fang |
2001-01-23 |
| 6127193 |
Test structure used to measure metal bottom coverage in trenches and vias/contacts and method for creating the test structure |
David Bang, Takeshi Nogami, Shekhar Pramanick |
2000-10-03 |
| 6110829 |
Ultra-low temperature Al fill for sub-0.25 .mu.m generation of ICs using an Al-Ge-Cu alloy |
Paul R. Besser, Robin Cheung |
2000-08-29 |
| 6100192 |
Method of forming high integrity tungsten silicide thin films |
Richard J. Huang |
2000-08-08 |
| 6096648 |
Copper/low dielectric interconnect formation with reduced electromigration |
Sergey Lopatin, Takeshi Nogami, Robin Cheung, Christy Mei-Chu Woo |
2000-08-01 |
| 6083817 |
Cobalt silicidation using tungsten nitride capping layer |
Takeshi Nogami, Robert Chen |
2000-07-04 |
| 6046106 |
High density plasma oxide gap filled patterned metal layers with improved electromigration resistance |
Khanh Tran, Paul R. Besser, Shekhar Pramanick |
2000-04-04 |
| 6033584 |
Process for reducing copper oxide during integrated circuit fabrication |
Minh Van Ngo, Takeshi Nogami |
2000-03-07 |
| 6030891 |
Vacuum baked HSQ gap fill layer for high integrity borderless vias |
Khanh Tran, Richard J. Huang |
2000-02-29 |
| 5994778 |
Surface treatment of low-k SiOF to prevent metal interaction |
Richard J. Huang, Simon S. Chan |
1999-11-30 |