| 10496291 |
Maintaining data integrity during data migration |
Narasimhan Badrinarayanan, Kannan Andireddi |
2019-12-03 |
$2,894,000 |
| 8949083 |
Modeling gate transconductance in a sub-circuit transistor model |
Jia Feng, Zhi-Yuan Wu, Juhi Bansal |
2015-02-03 |
$1,992,000 |
| 7768095 |
Shallow trench isolation process utilizing differential liners |
— |
2010-08-03 |
$7,387,000 |
| 7626242 |
Shallow trench isolation process utilizing differential liners |
— |
2009-12-01 |
$20,921,000 |
| 7364962 |
Shallow trench isolation process utilizing differential liners |
— |
2008-04-29 |
$6,332,000 |
| 7253068 |
Dual SOI film thickness for body resistance control |
Dong-Hyuk Ju, Mario Pelella |
2007-08-07 |
$6,329,000 |
| 7132683 |
Dual purpose test structure for gate-body current measurement in PD/SOI and for direct extraction of physical gate length in scaled CMOS technologies |
William G. En |
2006-11-07 |
$14,140,000 |
| 7122863 |
SOI device with structure for enhancing carrier recombination and method of fabricating same |
Dong-Hyuk Ju, William G. En, Xilin Judy An |
2006-10-17 |
$21,769,000 |
| 7071044 |
Method of making a test structure for gate-body current and direct extraction of physical gate length using conventional CMOS |
William G. En |
2006-07-04 |
|
| 7045433 |
Tip architecture with SPE for buffer and deep source/drain regions |
— |
2006-05-16 |
$46,797,000 |
| 6955969 |
Method of growing as a channel region to reduce source/drain junction capacitance |
Ihsan Djomehri, Jung-Suk Goo, Witold P. Maszara, James Pan, Qi Xiang |
2005-10-18 |
$5,936,000 |
| 6830987 |
Semiconductor device with a silicon-on-void structure and method of making the same |
Mario Pelella, William G. En, Witold P. Maszara |
2004-12-14 |
$6,995,000 |
| 6727149 |
Method of making a hybrid SOI device that suppresses floating body effects |
Witold P. Maszara, Zoran Krivokapic |
2004-04-27 |
$2,236,000 |
| 6717212 |
Leaky, thermally conductive insulator material (LTCIM) in semiconductor-on-insulator (SOI) structure |
Dong-Hyuk Ju, William G. En, Concetta Riccobene, Zoran Krivokapic, Judy Xilin An +1 more |
2004-04-06 |
$3,021,000 |
| 6713819 |
SOI MOSFET having amorphized source drain and method of fabrication |
William G. En, Dong-Hyuk Ju |
2004-03-30 |
$4,272,000 |
| 6630376 |
Body-tied-to-body SOI CMOS inverter circuit |
Jerry G. Fossum, Meng-Hsueh Chiang |
2003-10-07 |
$3,893,000 |
| 6613643 |
Structure, and a method of realizing, for efficient heat removal on SOI |
Matthew S. Buynoski |
2003-09-02 |
$4,831,000 |
| 6611023 |
Field effect transistor with self alligned double gate and method of forming same |
William G. En |
2003-08-26 |
$4,773,000 |
| 6589823 |
Silicon-on-insulator (SOI)electrostatic discharge (ESD) protection device with backside contact plug |
Stephen G. Beebe, Zoran Krivokapic |
2003-07-08 |
$2,679,000 |
| 6566213 |
Method of fabricating multi-thickness silicide device formed by disposable spacers |
William G. En, Dong-Hyuk Ju, Bin Yu |
2003-05-20 |
$2,116,000 |
| 6548361 |
SOI MOSFET and method of fabrication |
William G. En, Dong-Hyuk Ju |
2003-04-15 |
$2,272,000 |
| 6541821 |
SOI device with source/drain extensions and adjacent shallow pockets |
Witold P. Maszara, Zoran Krivokapic |
2003-04-01 |
$3,014,000 |
| 6535015 |
Device and method for testing performance of silicon structures |
Dong-Hyuk Ju, William G. En, Siu Lun Lee, Richard K. Klein |
2003-03-18 |
$1,685,000 |
| 6518631 |
Multi-Thickness silicide device formed by succesive spacers |
William G. En, Dong-Hyuk Ju, Bin Yu |
2003-02-11 |
$2,033,000 |
| 6512244 |
SOI device with structure for enhancing carrier recombination and method of fabricating same |
Dong-Hyuk Ju, William G. En, Xilin Judy An |
2003-01-28 |
$2,528,000 |
