Issued Patents All Time
Showing 1–15 of 15 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 6765227 | Semiconductor-on-insulator (SOI) wafer having a Si/SiGe/Si active layer and method of fabrication using wafer bonding | Bin Yu, William G. En, Judy Xilin An | 2004-07-20 |
| 6717212 | Leaky, thermally conductive insulator material (LTCIM) in semiconductor-on-insulator (SOI) structure | Dong-Hyuk Ju, William G. En, Srinath Krishnan, Zoran Krivokapic, Judy Xilin An +1 more | 2004-04-06 |
| 6667512 | Asymmetric retrograde halo metal-oxide-semiconductor field-effect transistor (MOSFET) | Carl Robert Huster | 2003-12-23 |
| 6548335 | Selective epitaxy to reduce gate/gate dielectric interface roughness | Carl Robert Huster, Scott Luning | 2003-04-15 |
| 6538284 | SOI device with body recombination region, and method | Dong-Hyuk Ju | 2003-03-25 |
| 6525378 | Raised S/D region for optimal silicidation to control floating body effects in SOI devices | — | 2003-02-25 |
| 6515333 | Removal of heat from SOI device | — | 2003-02-04 |
| 6479868 | Silicon-on-insulator transistors with asymmetric source/drain junctions formed by angled germanium implantation | Xilin Judy An, Bin Yu | 2002-11-12 |
| 6475816 | Method for measuring source and drain junction depth in silicon on insulator technology | Nga-Ching Wong, Tim Thurgate | 2002-11-05 |
| 6410371 | Method of fabrication of semiconductor-on-insulator (SOI) wafer having a Si/SiGe/Si active layer | Bin Yu, William G. En, Judy Xilin An | 2002-06-25 |
| 6396103 | Optimized single side pocket implant location for a field effect transistor | Carl Robert Huster | 2002-05-28 |
| 6391767 | Dual silicide process to reduce gate resistance | Carl Robert Huster, Wei Long | 2002-05-21 |
| 6274501 | Formation of structure to accurately measure source/drain resistance | Ognjen Milic-Strkalj | 2001-08-14 |
| 6242329 | Method for manufacturing asymmetric channel transistor | Carl Robert Huster, Richard P. Rouse, Donald L. Wollesen | 2001-06-05 |
| 6229184 | Semiconductor device with a modulated gate oxide thickness | — | 2001-05-08 |