| 8580660 |
Double and triple gate MOSFET devices and methods for making same |
Ming-Ren Lin, Zoran Krivokapic, Cyrus E. Tabery, Haihong Wang, Bin Yu |
2013-11-12 |
$1,972,000 |
| 8334181 |
Germanium MOSFET devices and methods for making same |
Zoran Krivokapic, Haihong Wang, Bin Yu |
2012-12-18 |
$2,684,000 |
| 8222680 |
Double and triple gate MOSFET devices and methods for making same |
Ming-Ren Lin, Zoran Krivokapic, Cyrus E. Tabery, Haihong Wang, Bin Yu |
2012-07-17 |
$8,676,000 |
| 7844927 |
Method for quality assured semiconductor device modeling |
Zhi-Yuan Wu, Ali Icel, Ciby Thuruthiyil |
2010-11-30 |
$11,033,000 |
| 7781810 |
Germanium MOSFET devices and methods for making same |
Zoran Krivokapic, Haihong Wang, Bin Yu |
2010-08-24 |
$5,281,000 |
| 7679134 |
FinFET device with multiple fin structures |
Matthew S. Buynoski, Haihong Wang, Bin Yu |
2010-03-16 |
$8,771,000 |
| 7630850 |
Integrated circuit tester information processing system for nonlinear mobility model for strained device |
Rasit Onur Topaloglu |
2009-12-08 |
$23,221,000 |
| 7610160 |
Integrated circuit tester information processing system |
Sushant S. Suryagandh |
2009-10-27 |
$8,132,000 |
| 7432557 |
FinFET device with multiple channels |
Matthew S. Buynoski, Bin Yu |
2008-10-07 |
$7,530,000 |
| 7432558 |
Formation of semiconductor devices to achieve <100> channel orientation |
Shibly S. Ahmed, Srikanteswara Dakshina-Murthy, Cyrus E. Tabery, Bin Yu |
2008-10-07 |
$7,530,000 |
| 7259425 |
Tri-gate and gate around MOSFET devices and methods for making same |
Haihong Wang, Bin Yu |
2007-08-21 |
$20,186,000 |
| 7179692 |
Method of manufacturing a semiconductor device having a fin structure |
Bin Yu, Shibly S. Ahmed, Srikanteswara Dakshina-Murthy, Zoran Krivokapic, Haihong Wang |
2007-02-20 |
$8,070,000 |
| 7148526 |
Germanium MOSFET devices and methods for making same |
Zoran Krivokapic, Haihong Wang, Bin Yu |
2006-12-12 |
$19,854,000 |
| 6960804 |
Semiconductor device having a gate structure surrounding a fin |
Chih-Yuh Yang, Shibly S. Ahmed, Srikanteswara Dakshina-Murthy, Bin Yu |
2005-11-01 |
|
| 6921963 |
Narrow fin FinFET |
Zoran Krivokapic, Srikanteswara Dakshina-Murthy, Haihong Wang, Bin Yu |
2005-07-26 |
$17,204,000 |
| 6911697 |
Semiconductor device having a thin fin and raised source/drain areas |
Haihong Wang, Bin Yu |
2005-06-28 |
$6,294,000 |
| 6897527 |
Strained channel FinFET |
Srikanteswara Dakshina-Murthy, Zoran Krivokapic, Haihong Wang, Bin Yu |
2005-05-24 |
$6,015,000 |
| 6872647 |
Method for forming multiple fins in a semiconductor device |
Bin Yu, Cyrus E. Tabery |
2005-03-29 |
$4,814,000 |
| 6855583 |
Method for forming tri-gate FinFET with mesa isolation |
Zoran Krivokapic, Bin Yu |
2005-02-15 |
$5,967,000 |
| 6853020 |
Double-gate semiconductor device |
Bin Yu |
2005-02-08 |
$6,824,000 |
| 6842048 |
Two transistor NOR device |
Zoran Krivokapic, Ming-Ren Lin, Haihong Wang |
2005-01-11 |
$4,696,000 |
| 6833588 |
Semiconductor device having a U-shaped gate structure |
Bin Yu, Shibly S. Ahmed, Srikanteswara Dakshina-Murthy, Zoran Krivokapic, Haihong Wang |
2004-12-21 |
$5,396,000 |
| 6815268 |
Method for forming a gate in a FinFET device |
Bin Yu, Srikanteswara Dakshina-Murthy |
2004-11-09 |
$3,568,000 |
| 6803631 |
Strained channel finfet |
Srikanteswara Dakshina-Murthy, Zoran Krivokapic, Haihong Wang, Bin Yu |
2004-10-12 |
$4,245,000 |
| 6800885 |
Asymmetrical double gate or all-around gate MOSFET devices and methods for making same |
Bin Yu |
2004-10-05 |
$3,728,000 |
