| 8580660 |
Double and triple gate MOSFET devices and methods for making same |
Judy Xilin An, Zoran Krivokapic, Cyrus E. Tabery, Haihong Wang, Bin Yu |
2013-11-12 |
$1,972,000 |
| 8502283 |
Strained fully depleted silicon on insulator semiconductor device |
Qi Xiang, Niraj Subba, Witold P. Maszara, Zoran Krivokapic |
2013-08-06 |
$2,454,000 |
| 8431466 |
Method of forming finned semiconductor devices with trench isolation |
Zoran Krivokapic, Witek Maszara |
2013-04-30 |
$3,960,000 |
| 8222680 |
Double and triple gate MOSFET devices and methods for making same |
Judy Xilin An, Zoran Krivokapic, Cyrus E. Tabery, Haihong Wang, Bin Yu |
2012-07-17 |
$8,676,000 |
| 8008136 |
Fully silicided gate structure for FinFET devices |
Witold P. Maszara, Haihong Wang, Bin Yu |
2011-08-30 |
$4,140,000 |
| 7994020 |
Method of forming finned semiconductor devices with trench isolation |
Zoran Krivokapic, Witek Maszara |
2011-08-09 |
$3,614,000 |
| 7871873 |
Method of forming fin structures using a sacrificial etch stop layer on bulk semiconductor material |
Witold P. Maszara, Jin Cho, Zoran Krivokapic |
2011-01-18 |
$6,681,000 |
| 7713834 |
Method of forming isolation regions for integrated circuits |
Haihong Wang, Minh Van Ngo, Qi Xiang, Paul R. Besser, Eric N. Paton |
2010-05-11 |
$11,612,000 |
| 7701019 |
Tensile strained substrate |
Minh Van Ngo, Paul R. Besser, Haihong Wang |
2010-04-20 |
$17,225,000 |
| 7648886 |
Shallow trench isolation process |
Minh Van Ngo, Qi Xiang, Paul R. Besser, Eric N. Paton |
2010-01-19 |
$30,644,000 |
| 7541267 |
Reversed T-shaped finfet |
Haihong Wang, Shibly S. Ahmed, Bin Yu |
2009-06-02 |
$11,563,000 |
| 7498225 |
Systems and methods for forming multiple fin structures using metal-induced-crystallization |
Haihong Wang, Shibly S. Ahmed, Bin Yu |
2009-03-03 |
$22,696,000 |
| 7422961 |
Method of forming isolation regions for integrated circuits |
Haihong Wang, Minh Van Ngo, Qi Xiang, Paul R. Besser, Eric N. Paton |
2008-09-09 |
$8,320,000 |
| 7416925 |
Doped structure for finfet devices |
Bin Yu |
2008-08-26 |
$4,862,000 |
| 7329582 |
Methods for fabricating a semiconductor device, which include selectively depositing an electrically conductive material |
James Pan, Jonathan B. Smith |
2008-02-12 |
$7,674,000 |
| 7306997 |
Strained fully depleted silicon on insulator semiconductor device and manufacturing method therefor |
Qi Xiang, Niraj Subba, Witold P. Maszara, Zoran Krivokapic |
2007-12-11 |
$6,596,000 |
| 7250645 |
Reversed T-shaped FinFET |
Haihong Wang, Shibly S. Ahmed, Bin Yu |
2007-07-31 |
$9,995,000 |
| 7238591 |
Heat removal in SOI devices using a buried oxide layer/conductive layer combination |
— |
2007-07-03 |
$26,803,000 |
| 7235436 |
Method for doping structures in FinFET devices |
Zoran Krivokapic, Haihong Wang, Bin Yu |
2007-06-26 |
$10,288,000 |
| 7196374 |
Doped structure for FinFET devices |
Bin Yu |
2007-03-27 |
$8,823,000 |
| 7196372 |
Flash memory device |
Bin Yu, Srikanteswara Dakshina-Murthy, Zoran Krivokapic |
2007-03-27 |
$4,780,000 |
| 7078278 |
Dual-metal CMOS transistors with tunable gate electrode work function and method of making the same |
James Pan |
2006-07-18 |
$7,111,000 |
| 7064022 |
Method of forming merged FET inverter/logic gate |
Wiley Eugene Hill, Bin Yu |
2006-06-20 |
$7,818,000 |
| 7001837 |
Semiconductor with tensile strained substrate and method of making the same |
Minh Van Ngo, Paul R. Besser, Haihong Wang |
2006-02-21 |
$12,668,000 |
| 6962857 |
Shallow trench isolation process using oxide deposition and anneal |
Minh Van Ngo, Eric N. Paton, Haihong Wang, Qi Xiang, Jung-Suk Goo |
2005-11-08 |
$6,799,000 |
