Issued Patents All Time
Showing 25 most recent of 105 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 8580660 | Double and triple gate MOSFET devices and methods for making same | Judy Xilin An, Zoran Krivokapic, Cyrus E. Tabery, Haihong Wang, Bin Yu | 2013-11-12 |
| 8502283 | Strained fully depleted silicon on insulator semiconductor device | Qi Xiang, Niraj Subba, Witold P. Maszara, Zoran Krivokapic | 2013-08-06 |
| 8431466 | Method of forming finned semiconductor devices with trench isolation | Zoran Krivokapic, Witek Maszara | 2013-04-30 |
| 8222680 | Double and triple gate MOSFET devices and methods for making same | Judy Xilin An, Zoran Krivokapic, Cyrus E. Tabery, Haihong Wang, Bin Yu | 2012-07-17 |
| 8008136 | Fully silicided gate structure for FinFET devices | Witold P. Maszara, Haihong Wang, Bin Yu | 2011-08-30 |
| 7994020 | Method of forming finned semiconductor devices with trench isolation | Zoran Krivokapic, Witek Maszara | 2011-08-09 |
| 7871873 | Method of forming fin structures using a sacrificial etch stop layer on bulk semiconductor material | Witold P. Maszara, Jin Cho, Zoran Krivokapic | 2011-01-18 |
| 7713834 | Method of forming isolation regions for integrated circuits | Haihong Wang, Minh Van Ngo, Qi Xiang, Paul R. Besser, Eric N. Paton | 2010-05-11 |
| 7701019 | Tensile strained substrate | Minh Van Ngo, Paul R. Besser, Haihong Wang | 2010-04-20 |
| 7648886 | Shallow trench isolation process | Minh Van Ngo, Qi Xiang, Paul R. Besser, Eric N. Paton | 2010-01-19 |
| 7541267 | Reversed T-shaped finfet | Haihong Wang, Shibly S. Ahmed, Bin Yu | 2009-06-02 |
| 7498225 | Systems and methods for forming multiple fin structures using metal-induced-crystallization | Haihong Wang, Shibly S. Ahmed, Bin Yu | 2009-03-03 |
| 7422961 | Method of forming isolation regions for integrated circuits | Haihong Wang, Minh Van Ngo, Qi Xiang, Paul R. Besser, Eric N. Paton | 2008-09-09 |
| 7416925 | Doped structure for finfet devices | Bin Yu | 2008-08-26 |
| 7329582 | Methods for fabricating a semiconductor device, which include selectively depositing an electrically conductive material | James Pan, Jonathan B. Smith | 2008-02-12 |
| 7306997 | Strained fully depleted silicon on insulator semiconductor device and manufacturing method therefor | Qi Xiang, Niraj Subba, Witold P. Maszara, Zoran Krivokapic | 2007-12-11 |
| 7250645 | Reversed T-shaped FinFET | Haihong Wang, Shibly S. Ahmed, Bin Yu | 2007-07-31 |
| 7238591 | Heat removal in SOI devices using a buried oxide layer/conductive layer combination | — | 2007-07-03 |
| 7235436 | Method for doping structures in FinFET devices | Zoran Krivokapic, Haihong Wang, Bin Yu | 2007-06-26 |
| 7196374 | Doped structure for FinFET devices | Bin Yu | 2007-03-27 |
| 7196372 | Flash memory device | Bin Yu, Srikanteswara Dakshina-Murthy, Zoran Krivokapic | 2007-03-27 |
| 7078278 | Dual-metal CMOS transistors with tunable gate electrode work function and method of making the same | James Pan | 2006-07-18 |
| 7064022 | Method of forming merged FET inverter/logic gate | Wiley Eugene Hill, Bin Yu | 2006-06-20 |
| 7001837 | Semiconductor with tensile strained substrate and method of making the same | Minh Van Ngo, Paul R. Besser, Haihong Wang | 2006-02-21 |
| 6962857 | Shallow trench isolation process using oxide deposition and anneal | Minh Van Ngo, Eric N. Paton, Haihong Wang, Qi Xiang, Jung-Suk Goo | 2005-11-08 |