James Pan — 77 Patents at AMD | Patent Leaderboard

James Pan has been granted 77 US patents while listed as an inventor at AMD. The first was granted in 2000 and the most recent in December 2015. James Pan ranks #24,274 of 4,157,543 US inventors in our database (top 0.58%). Patent records list James Pan in Boise, ID, US.

Issued Patents All Time

Showing 1–25 of 77 patents

Patent #	Title	Co-Inventors	Date	Approx Value ⓘ
9224853	Shielded gate trench FET with multiple channels	—	2015-12-29	$19,339,000
8933519	Magnetic dynamic random access nonvolatile semiconductor memory (MRAM)	—	2015-01-13
8815744	Technique for controlling trench profile in semiconductor structures	Hui-Chi Chen, Qi Wang, Briant Harward	2014-08-26	$1,063,000
8772868	Superjunction structures for power devices and methods of manufacture	Joseph A. Yedinak, Mark L. Rinehimer, Praveen Muraleedharan Shenoy, Hamza Yilmaz, Rodney S. Ridley	2014-07-08	$5,734,000
8753943	Replacement metal gate transistors with reduced gate oxide leakage	John G. Pellerin	2014-06-17	$6,338,000
8669623	Structure related to a thick bottom dielectric (TBD) for trench-gate devices	Christopher L. Rexer	2014-03-11	$5,854,000
8541840	Structure and method for semiconductor power devices	—	2013-09-24	$4,041,000
8445975	Replacement metal gate transistors with reduced gate oxide leakage	John G. Pellerin	2013-05-21	$4,418,000
8329538	Shielded gate trench FET with an inter-electrode dielectric having a low-k dielectric therein	James J. Murphy	2012-12-11	$1,960,000
8278686	Structure and method for forming planar gate field effect transistor with low resistance channel region	Qi Wang	2012-10-02	$1,334,000
8278702	High density trench field effect transistor	Scott L. Hunt, Dean E. Probst, Hossein Paravi	2012-10-02	$1,334,000
8253194	Structures for reducing dopant out-diffusion from implant regions in power devices	—	2012-08-28	$5,193,000
8124473	Strain enhanced semiconductor devices and methods for their fabrication	Sey-Ping Sun, Andrew Waite	2012-02-28	$5,561,000
8097500	Method and apparatus for fabricating a high-performance band-edge complementary metal-oxide-semiconductor device	Takashi Ando, Eduard A. Cartier, Changhwan Choi, Elizabeth A. Duch, Bruce B. Doris +3 more	2012-01-17	$12,258,000
8084795	Resonant cavity complementary optoelectronic transistors	—	2011-12-27
8053849	Replacement metal gate transistors with reduced gate oxide leakage	John G. Pellerin	2011-11-08	$4,445,000
7994573	Structure and method for forming power devices with carbon-containing region	—	2011-08-09	$7,147,000
7943993	Structure and method for forming field effect transistor with low resistance channel region	Qi Wang	2011-05-17	$6,665,000
7936009	Shielded gate trench FET with an inter-electrode dielectric having a low-k dielectric therein	James J. Murphy	2011-05-03	$2,649,000
7932556	Structure and method for forming power devices with high aspect ratio contact openings	—	2011-04-26	$5,393,000
7910995	Structure and method for semiconductor power devices	—	2011-03-22	$4,742,000
7825465	Structure and method for forming field effect transistor with low resistance channel region	Qi Wang	2010-11-02	$2,339,000
7807576	Structure and method for forming a thick bottom dielectric (TBD) for trench-gate devices	—	2010-10-05	$2,565,000
7772668	Shielded gate trench FET with multiple channels	—	2010-08-10	$1,934,000
7732336	Shallow trench isolation process and structure with minimized strained silicon consumption	Qi Xiang, Jung-Suk Goo	2010-06-08	$16,231,000

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James Pan — 77 Patents

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