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MOSFET bridge circuit |
Joseph A. Yedinak, Scott Pearson, Sungjin Kuen |
2016-11-29 |
| 8836028 |
Superjunction structures for power devices and methods of manufacture |
Joseph A. Yedinak, Praveen Muraleedharan Shenoy, Jaegil LEE, Dwayne S. Reichl, Harold Heidenreich |
2014-09-16 |
| 8772868 |
Superjunction structures for power devices and methods of manufacture |
Joseph A. Yedinak, Praveen Muraleedharan Shenoy, Hamza Yilmaz, James Pan, Rodney S. Ridley |
2014-07-08 |
| 8673700 |
Superjunction structures for power devices and methods of manufacture |
Joseph A. Yedinak, Praveen Muraleedharan Shenoy |
2014-03-18 |
| 8502313 |
Double layer metal (DLM) power MOSFET |
Rohit Dikshit, Michael D. Gruenhagen, Joseph A. Yedinak, Tracie Petersen, Ritu Sodhi +3 more |
2013-08-06 |
| 8492837 |
Reduced process sensitivity of electrode-semiconductor rectifiers |
Joseph A. Yedinak, Thomas E. Grebs, John L. Benjamin |
2013-07-23 |
| 8227855 |
Semiconductor devices with stable and controlled avalanche characteristics and methods of fabricating the same |
Joseph A. Yedinak, Thomas E. Grebs, John L. Benjamin |
2012-07-24 |
| 8198687 |
Structure with PN clamp regions under trenches |
— |
2012-06-12 |
| 8148749 |
Trench-shielded semiconductor device |
Thomas E. Grebs, Joseph A. Yedinak, Dean E. Probst, Gary M. Dolny, John L. Benjamin |
2012-04-03 |
| 8049276 |
Reduced process sensitivity of electrode-semiconductor rectifiers |
Joseph A. Yedinak, Thomas E. Grebs, John L. Benjamin |
2011-11-01 |
| 7750412 |
Rectifier with PN clamp regions under trenches |
— |
2010-07-06 |
| 6831329 |
Quick punch through IGBT having gate-controllable DI/DT and reduced EMI during inductive turn off |
Joseph A. Yedinak, Jon Gladish, Sampat Shekhawat, Gary M. Dolny, Praveen Muraleedharan Shenoy +1 more |
2004-12-14 |