Issued Patents All Time
Showing 1–25 of 65 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 12272747 | Electronic device including a transistor structure | — | 2025-04-08 |
| 12166090 | Electronic device including a transistor and a shield electrode | Zia Hossain, Sauvik Chowdhury, Muh-Ling Ger | 2024-12-10 |
| 12051967 | Integrated transistor and resistor-diode-capacitor snubber | Dean E. Probst, Balaji Padmanabhan, Peter A. Burke, Jeffery A. Neuls, Ashok Challa | 2024-07-30 |
| 12027622 | Insulated gated field effect transistor structure having shielded source and method | Xiaoli Wu | 2024-07-02 |
| 11637201 | Insulated gated field effect transistor structure having shielded source and method | Xiaoli Wu | 2023-04-25 |
| 11342424 | Electronic device including a transistor and a shield electrode | Zia Hossain, Sauvik Chowdhury, Muh-Ling Ger | 2022-05-24 |
| 11222976 | Insulated gated field effect transistor structure having shielded source and method | Xiaoli Wu | 2022-01-11 |
| 10868113 | Trench-based power semiconductor devices with increased breakdown voltage characteristics | Ashok Challa, Dean E. Probst, Daniel M. Kinzer | 2020-12-15 |
| 10784373 | Insulated gated field effect transistor structure having shielded source and method | Xiaoli Wu | 2020-09-22 |
| 10749027 | Methods and apparatus related to termination regions of a semiconductor device | Richard Stokes, Jason Higgs, Fred Session | 2020-08-18 |
| 10446640 | Termination implant enrichment for shielded gate MOSFETS | Xiaoli Wu | 2019-10-15 |
| 10374076 | Shield indent trench termination for shielded gate MOSFETs | Xiaoli Wu | 2019-08-06 |
| 10236340 | Termination implant enrichment for shielded gate MOSFETs | Xiaoli Wu | 2019-03-19 |
| 9748329 | Trench-based power semiconductor devices with increased breakdown voltage characteristics | Ashok Challa | 2017-08-29 |
| 9595596 | Superjunction structures for power devices | Jaegil LEE, Chongman Yun, Praveen Muraleedharan Shenoy, Christopher L. Rexer | 2017-03-14 |
| 9559498 | Ignition control circuit with dual (two-stage) clamp | Scott Pearson | 2017-01-31 |
| 9509227 | MOSFET bridge circuit | Scott Pearson, Mark L. Rinehimer, Sungjin Kuen | 2016-11-29 |
| 9496391 | Termination region of a semiconductor device | Richard Stokes, Jason Higgs, Fred Session | 2016-11-15 |
| 9391193 | Trench-based power semiconductor devices with increased breakdown voltage characteristics | Ashok Challa, Daniel M. Kinzer, Dean E. Probst, Daniel Calafut | 2016-07-12 |
| 9293526 | Trench-based power semiconductor devices with increased breakdown voltage characteristics | Ashok Challa, Dean E. Probst | 2016-03-22 |
| 8963212 | Trench-based power semiconductor devices with increased breakdown voltage characteristics | Ashok Challa, Daniel M. Kinzer, Dean E. Probst, Daniel Calafut | 2015-02-24 |
| 8932924 | Trench-based power semiconductor devices with increased breakdown voltage characteristics | Dean E. Probst, Daniel Calafut | 2015-01-13 |
| 8928077 | Superjunction structures for power devices | Jaegil LEE, Chongman Yun, Hocheol Jang, Christopher L. Rexer, Praveen Muraleedharan Shenoy +1 more | 2015-01-06 |
| 8889511 | Methods of manufacturing power semiconductor devices with trenched shielded split gate transistor | Nathan Kraft | 2014-11-18 |
| 8884365 | Trench-gate field effect transistor | Hamza Yilmaz, Daniel Calafut, Christopher Boguslaw Kocon, Steven Sapp, Dean E. Probst +5 more | 2014-11-11 |