Issued Patents All Time
Showing 25 most recent of 113 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 12317539 | Hybrid component with silicon and wide bandgap semiconductor material in silicon recess with nitride spacer | Henry Litzmann Edwards, Curry Bachman Taylor | 2025-05-27 |
| 12218235 | Hybrid component with silicon and wide bandgap semconductor material | Henry Litzmann Edwards, Curry Bachman Taylor | 2025-02-04 |
| 12009421 | Semiconductor on insulator on wide band-gap semiconductor | — | 2024-06-11 |
| 11621347 | Drain extended transistor with trench gate | — | 2023-04-04 |
| 11569378 | Semiconductor on insulator on wide band-gap semiconductor | — | 2023-01-31 |
| 11557673 | Hybrid semiconductor device | Henry Litzmann Edwards | 2023-01-17 |
| 11444191 | Integrated channel diode | Simon John Molloy, John Manning Savidge Neilson, Hideaki Kawahara | 2022-09-13 |
| 11239744 | Active monolithic snubber design | — | 2022-02-01 |
| 11177253 | Transistor with integrated capacitor | — | 2021-11-16 |
| 11049853 | ESD protection device with breakdown voltage stabilization | — | 2021-06-29 |
| 11011510 | Breakdown uniformity for ESD protection device | — | 2021-05-18 |
| 10811533 | Medium high voltage MOSFET device | Hideaki Kawahara, Simon John Molloy, Satoshi Suzuki, John Manning Savidge Neilson | 2020-10-20 |
| 10770584 | Drain extended transistor with trench gate | — | 2020-09-08 |
| 10741684 | Integrated channel diode | Simon John Molloy, John Manning Savidge Neilson, Hideaki Kawahara | 2020-08-11 |
| 10672901 | Power transistor with terminal trenches in terminal resurf regions | Hideaki Kawahara, Seetharaman Sridhar, Satoshi Suzuki, Simon John Molloy | 2020-06-02 |
| 10573718 | Vertical high-voltage MOS transistor | Simon John Molloy, John Manning Savidge Neilson, Hideaki Kawahara | 2020-02-25 |
| 10553717 | Medium voltage MOSFET device | Hideaki Kawahara, Simon John Molloy, Satoshi Suzuki, John Manning Savidge Neilson | 2020-02-04 |
| 10541326 | Multiple shielding trench gate FET | Hideaki Kawahara, Seetharaman Sridhar, Simon John Molloy, Hong-Seon Yang | 2020-01-21 |
| 10256337 | Power transistor with terminal trenches in terminal resurf regions | Hideaki Kawahara, Seetharaman Sridhar, Simon John Molloy, Satoshi Suzuki | 2019-04-09 |
| 9905638 | Silicon epitaxy for high aspect ratio, substantially perpendicular deep silicon trench | Tatsuya Tominari, Satoshi Suzuki, Seetharaman Sridhar, Simon John Molloy, Hideaki Kawahara | 2018-02-27 |
| 9905428 | Split-gate lateral extended drain MOS transistor structure and process | Andrew Strachan, Alexei Sadovnikov | 2018-02-27 |
| 9881995 | MOSFET having dual-gate cells with an integrated channel diode | John Manning Savidge Neilson | 2018-01-30 |
| 9711639 | Multiple shielding trench gate FET | Hideaki Kawahara, Seetharaman Sridhar, Simon John Molloy, Hong-Seon Yang | 2017-07-18 |
| 9673317 | Integrated termination for multiple trench field plate | Hideaki Kawahara, Simon John Molloy, Jayhoon CHUNG, John Manning Savidge Neilson | 2017-06-06 |
| 9653342 | Trench having thick dielectric selectively on bottom portion | Hideaki Kawahara, Hong-Seon Yang, Yufei Xiong, Yunlong Liu | 2017-05-16 |