Issued Patents All Time
Showing 1–25 of 47 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 11444191 | Integrated channel diode | Christopher Boguslaw Kocon, Simon John Molloy, Hideaki Kawahara | 2022-09-13 |
| 10811533 | Medium high voltage MOSFET device | Christopher Boguslaw Kocon, Hideaki Kawahara, Simon John Molloy, Satoshi Suzuki | 2020-10-20 |
| 10741684 | Integrated channel diode | Christopher Boguslaw Kocon, Simon John Molloy, Hideaki Kawahara | 2020-08-11 |
| 10573718 | Vertical high-voltage MOS transistor | Christopher Boguslaw Kocon, Simon John Molloy, Hideaki Kawahara | 2020-02-25 |
| 10553717 | Medium voltage MOSFET device | Christopher Boguslaw Kocon, Hideaki Kawahara, Simon John Molloy, Satoshi Suzuki | 2020-02-04 |
| 9941383 | Fast switching IGBT with embedded emitter shorting contacts and method for making same | Jacek Korec, Sameer Pendharkar | 2018-04-10 |
| 9881995 | MOSFET having dual-gate cells with an integrated channel diode | Christopher Boguslaw Kocon | 2018-01-30 |
| 9673317 | Integrated termination for multiple trench field plate | Hideaki Kawahara, Christopher Boguslaw Kocon, Simon John Molloy, Jayhoon CHUNG | 2017-06-06 |
| 9601612 | MOSFET having dual-gate cells with an integrated channel diode | Christopher Boguslaw Kocon | 2017-03-21 |
| 9525035 | Vertical high-voltage MOS transistor and method of forming the same | Christopher Boguslaw Kocon, Simon John Molloy, Hideaki Kawahara | 2016-12-20 |
| 9484450 | Integrated channel diode | Christopher Boguslaw Kocon, Simon John Molloy, Hideaki Kawahara | 2016-11-01 |
| 9450082 | Integrated termination for multiple trench field plate | Hideaki Kawahara, Christopher Boguslaw Kocon, Simon John Molloy, Jayhoon CHUNG | 2016-09-20 |
| 9385196 | Fast switching IGBT with embedded emitter shorting contacts and method for making same | Jacek Korec, Sameer Pendharkar | 2016-07-05 |
| 9356133 | Medium voltage MOSFET device | Christopher Boguslaw Kocon, Hideaki Kawahara, Simon John Molloy, Satoshi Suzuki | 2016-05-31 |
| 9324856 | MOSFET having dual-gate cells with an integrated channel diode | Christopher Boguslaw Kocon | 2016-04-26 |
| 9245994 | MOSFET with curved trench feature coupling termination trench to active trench | Hideaki Kawahara, Christopher Boguslaw Kocon, Simon John Molloy | 2016-01-26 |
| 9230851 | Reduction of polysilicon residue in a trench for polysilicon trench filling processes | Simon John Molloy, Christopher Boguslaw Kocon, Hong-Seon Yang, Seetharaman Sridhar, Hideaki Kawahara | 2016-01-05 |
| 9136381 | Super junction MOSFET with integrated channel diode | Christopher Boguslaw Kocon, Simon John Molloy, Hideaki Kawahara | 2015-09-15 |
| 8748976 | Dual RESURF trench field plate in vertical MOSFET | Christopher Boguslaw Kocon, Simon John Molloy, Hideaki Kawahara, Hong-Seon Yang, Seetharaman Sridhar +2 more | 2014-06-10 |
| 8294210 | High voltage channel diode | Christopher Boguslaw Kocon, Simon John Molloy, Haian Lin, Charles Walter Pearce, Gary Eugene Daum | 2012-10-23 |
| 8288820 | High voltage power integrated circuit | Christopher Boguslaw Kocon, Simon John Molloy, Haian Lin, Charles Walter Pearce | 2012-10-16 |
| 6080614 | Method of making a MOS-gated semiconductor device with a single diffusion | Linda S. Brush, Frank Stensney, John L. Benjamin, Anup Bhalla, Christopher L. Rexer +4 more | 2000-06-27 |
| 6054369 | Lifetime control for semiconductor devices | John L. Benjamin, Maxime Zafrani | 2000-04-25 |
| 5940689 | Method of fabricating UMOS semiconductor devices using a self-aligned, reduced mask process | Christopher L. Rexer, Mark L. Rineheimer, Thomas E. Grebs | 1999-08-17 |
| 5877044 | Method of making MOS-gated semiconductor devices | Christopher Boguslaw Kocon, Richard Stokes, Linda S. Brush, John L. Benjamin, Louise Skurkey +1 more | 1999-03-02 |