Issued Patents All Time
Showing 25 most recent of 59 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 11791377 | Power device integration on a common substrate | Boyi Yang | 2023-10-17 |
| 11616137 | Schottky power mosfet | Haian Lin, Shuming Xu | 2023-03-28 |
| 11302775 | Power device integration on a common substrate | Boyi Yang | 2022-04-12 |
| 10629723 | Schottky power MOSFET | Haian Lin, Shuming Xu | 2020-04-21 |
| 10290702 | Power device on bulk substrate | Michael A. Stuber, Stuart B. Molin, Boyi Yang | 2019-05-14 |
| 10290703 | Power device integration on a common substrate | Boyi Yang | 2019-05-14 |
| 9941383 | Fast switching IGBT with embedded emitter shorting contacts and method for making same | John Manning Savidge Neilson, Sameer Pendharkar | 2018-04-10 |
| 9825124 | Power device integration on a common substrate | Boyi Yang | 2017-11-21 |
| 9412881 | Power device integration on a common substrate | Boyi Yang | 2016-08-09 |
| 9385196 | Fast switching IGBT with embedded emitter shorting contacts and method for making same | John Manning Savidge Neilson, Sameer Pendharkar | 2016-07-05 |
| 9324858 | Trench-gated MIS devices | Anup Bhalla, Dorman C. Pitzer, Xiaorong Shi, Sik Lui | 2016-04-26 |
| 9246355 | MOS transistor device in common source configuration | Stephen L. Colino | 2016-01-26 |
| 9136060 | Precision high-frequency capacitor formed on semiconductor substrate | Haim Goldberger, Sik Lui, Y. Mohammed Kasem, Harianto Wong, Jack Van Den Heuvel | 2015-09-15 |
| 8994115 | Power device integration on a common substrate | Boyi Yang | 2015-03-31 |
| 8994105 | Power device integration on a common substrate | — | 2015-03-31 |
| 8928116 | Power device integration on a common substrate | Boyi Yang | 2015-01-06 |
| 8847310 | Power device integration on a common substrate | — | 2014-09-30 |
| 8722503 | Capacitors and methods of forming | Shuming Xu, Jun Wang, Boyi Yang | 2014-05-13 |
| 8692324 | Semiconductor devices having charge balanced structure | Shuming Xu, Christopher Boguslaw Kocon | 2014-04-08 |
| 8674440 | Power device integration on a common substrate | Boyi Yang | 2014-03-18 |
| 8629019 | Method of forming self aligned contacts for a power MOSFET | Robert Xu | 2014-01-14 |
| 8614480 | Power MOSFET with integrated gate resistor and diode-connected MOSFET | Jun Wang, Shuming Xu | 2013-12-24 |
| 8552585 | MOS transistor device in common source configuration | Stephen L. Colino | 2013-10-08 |
| 8547162 | Integration of MOSFETs in a source-down configuration | Christopher Boguslaw Kocon, Shuming Xu | 2013-10-01 |
| 8367500 | Method of forming self aligned contacts for a power MOSFET | Robert Xu | 2013-02-05 |