Issued Patents All Time
Showing 25 most recent of 301 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 11710662 | Reusable wide bandgap semiconductor substrate | Leonid Fursin | 2023-07-25 |
| 11594613 | Sawtooh electric field drift region structure for planar and trench power semiconductor devices | Madhur Bobde, Lingpeng Guan, Hamza Yilmaz | 2023-02-28 |
| 11211373 | Double-sided chip stack assembly | Francisco Astrera Sudario | 2021-12-28 |
| 11038037 | Sawtooh electric field drift region structure for planar and trench power semiconductor devices | Madhur Bobde, Lingpeng Guan, Hamza Yilmaz | 2021-06-15 |
| 10978585 | MOS device with island region | Xiaobin Wang, Ji Pan, Sung-Po Wei | 2021-04-13 |
| 10896968 | Device structure and manufacturing method using HDP deposited source-body implant block | Francois Hebert, Sung-Shan Tai, Sik Lui | 2021-01-19 |
| 10825733 | Reusable wide bandgap semiconductor substrate | Leonid Fursin | 2020-11-03 |
| 10763351 | Vertical trench DMOSFET having integrated implants forming enhancement diodes in parallel with the body diode | Ji Pan | 2020-09-01 |
| 10686062 | Topside structures for an insulated gate bipolar transistor (IGBT) device to achieve improved device performances | Madhur Bobde | 2020-06-16 |
| 10686035 | Nano-tube MOSFET technology and devices | Hamza Yilmaz, Daniel Ng, Lingping Guan, Wilson Ma, Moses Ho +1 more | 2020-06-16 |
| 10680097 | MOSFET device and fabrication | John Chen, Il Kwan Lee, Hong Chang, Wenjun Li, Hamza Yilmaz | 2020-06-09 |
| 10593759 | Nanotube semiconductor devices | Hamza Yilmaz, Xiaobin Wang, John Chen, Hong Chang | 2020-03-17 |
| 10573762 | Vertical gallium nitride Schottky diode | TingGang Zhu, Ping Huang, Yueh-Se Ho | 2020-02-25 |
| 10535764 | Device and fabrication of MOS device with island region | Xiaobin Wang, Ji Pan, Sung-Po Wei | 2020-01-14 |
| 10522666 | Methods for fabricating anode shorted field stop insulated gate bipolar transistor | Madhur Bobde, Yongping Ding, Xiaotian Zhang, Yueh-Se Ho | 2019-12-31 |
| 10468526 | Self-aligned slotted accumulation-mode field effect transistor (ACCUFET) structure and method | Francois Hebert, Madhur Bobde | 2019-11-05 |
| 10446695 | Planar multi-implanted JFET | Zhongda Li | 2019-10-15 |
| 10439058 | Normally off gallium nitride field effect transistors (FET) | TingGang Zhu | 2019-10-08 |
| 10396158 | Termination structure for nanotube semiconductor devices | Hamza Yilmaz, Xiaobin Wang, John Chen, Hong Chang | 2019-08-27 |
| 10396215 | Trench vertical JFET with improved threshold voltage control | Peter Alexandrov | 2019-08-27 |
| 10367098 | Vertical JFET made using a reduced masked set | Zhongda Li | 2019-07-30 |
| 10367099 | Trench vertical JFET with ladder termination | Zhongda Li | 2019-07-30 |
| 10333006 | Termination structure for gallium nitride Schottky diode including junction barriar diodes | TingGang Zhu, Ping Huang, Yueh-Se Ho | 2019-06-25 |
| 10192982 | Nano MOSFET with trench bottom oxide shielded and third dimensional P-body contact | Hamza Yilmaz, Daniel Ng, Daniel Calafut, Madhur Bobde, Ji Pan +2 more | 2019-01-29 |
| 10177221 | Integrated Schottky diode in high voltage semiconductor device | Lingpeng Guan, Madhur Bobde, TingGang Zhu | 2019-01-08 |