Issued Patents All Time
Showing 1–25 of 85 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 11869967 | Bottom source trench MOSFET with shield electrode | Sik Lui, Madhur Bobde, Lei Zhang | 2024-01-09 |
| 11774296 | Method and circuit for sensing MOSFET temperature for load switch application | Zhenyu Wang, Jian Yin, Sitthipong Angkititrakul, Christopher Ben Bartholomeusz, Xiaobin Wang | 2023-10-03 |
| 11756993 | IGBT light load efficiency | Madhur Bobde, Karthik Padmanabhan, Bum Seok Suh | 2023-09-12 |
| 11749716 | Semiconductor device incorporating epitaxial layer field stop zone | Lei Zhang, Karthik Padmanabhan, Jian Wang, Lingbing Chen, Wim Aarts +3 more | 2023-09-05 |
| 11728423 | Integrated planar-trench gate power MOSFET | Wenjun Li, Jian Wang, Lingbing Chen | 2023-08-15 |
| 11594613 | Sawtooh electric field drift region structure for planar and trench power semiconductor devices | Madhur Bobde, Anup Bhalla, Hamza Yilmaz | 2023-02-28 |
| 11569345 | Gas dopant doped deep trench super junction high voltage MOSFET | Wenjun Li, Lingbing Chen, Jian Wang | 2023-01-31 |
| 11508819 | Method for forming super-junction corner and termination structure with graded sidewalls | Madhur Bobde, Karthik Padmanabhan | 2022-11-22 |
| 11342410 | Improving IGBT light load efficiency | Madhur Bobde, Karthik Padmanabhan, Bum Seok Suh | 2022-05-24 |
| 11101137 | Method of making reverse conducting insulated gate bipolar transistor | Zhiqiang Niu, Long Wang, Yueh-Se Ho, Wenjun Li | 2021-08-24 |
| 11038022 | Super-junction corner and termination structure with graded sidewalls | Madhur Bobde, Karthik Padmanabhan | 2021-06-15 |
| 11038037 | Sawtooh electric field drift region structure for planar and trench power semiconductor devices | Madhur Bobde, Anup Bhalla, Hamza Yilmaz | 2021-06-15 |
| 11031465 | Semiconductor device incorporating epitaxial layer field stop zone | Lei Zhang, Karthik Padmanabhan, Jian Wang, Lingbing Chen, Wim Aarts +3 more | 2021-06-08 |
| 10931276 | Combined IGBT and superjunction MOSFET device with tuned switching speed | Bum Seok Suh, Madhur Bobde, Karthik Padmanabhan | 2021-02-23 |
| 10930591 | Trench MOSFET with self-aligned body contact with spacer | Kyle Terrill, Seokjin Jo | 2021-02-23 |
| 10903163 | Trench MOSFET with self-aligned body contact with spacer | Kyle Terrill, Seokjin Jo | 2021-01-26 |
| 10755931 | Semiconductor device and method of forming including superjunction structure formed using angled implant process | Karthik Padmanabhan, Madhur Bobde, Lei Zhang, Hamza Yilmaz | 2020-08-25 |
| 10644102 | SGT superjunction MOSFET structure | Karthik Padmanabhan, Madhur Bobde, Jian Wang, Lei Zhang | 2020-05-05 |
| 10580868 | Super-junction corner and termination structure with improved breakdown and robustness | Madhur Bobde, Karthik Padmanabhan | 2020-03-03 |
| 10446679 | Method for forming a lateral super-junction MOSFET device and termination structure | Madhur Bobde, Karthik Padmanabhan, Hamza Yilmaz | 2019-10-15 |
| 10276387 | Semiconductor device including superjunction structure formed using angled implant process | Karthik Padmanabhan, Madhur Bobde, Lei Zhang, Hamza Yilmaz | 2019-04-30 |
| 10243072 | Method for forming a lateral super-junction MOSFET device and termination structure | Madhur Bobde, Karthik Padmanabhan, Hamza Yilmaz | 2019-03-26 |
| 10177221 | Integrated Schottky diode in high voltage semiconductor device | Anup Bhalla, Madhur Bobde, TingGang Zhu | 2019-01-08 |
| 10069005 | Termination design for high voltage device | Anup Bhalla, Hamza Yilmaz | 2018-09-04 |
| 9991380 | Lateral super-junction MOSFET device and termination structure | Madhur Bobde, Karthik Padmanabhan, Hamza Yilmaz | 2018-06-05 |