Issued Patents All Time
Showing 1–25 of 26 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 11756993 | IGBT light load efficiency | Madhur Bobde, Lingpeng Guan, Bum Seok Suh | 2023-09-12 |
| 11749716 | Semiconductor device incorporating epitaxial layer field stop zone | Lei Zhang, Lingpeng Guan, Jian Wang, Lingbing Chen, Wim Aarts +3 more | 2023-09-05 |
| 11508819 | Method for forming super-junction corner and termination structure with graded sidewalls | Madhur Bobde, Lingpeng Guan | 2022-11-22 |
| 11342410 | Improving IGBT light load efficiency | Madhur Bobde, Lingpeng Guan, Bum Seok Suh | 2022-05-24 |
| 11038022 | Super-junction corner and termination structure with graded sidewalls | Madhur Bobde, Lingpeng Guan | 2021-06-15 |
| 11031465 | Semiconductor device incorporating epitaxial layer field stop zone | Lei Zhang, Lingpeng Guan, Jian Wang, Lingbing Chen, Wim Aarts +3 more | 2021-06-08 |
| 10931276 | Combined IGBT and superjunction MOSFET device with tuned switching speed | Bum Seok Suh, Madhur Bobde, Lingpeng Guan | 2021-02-23 |
| 10755931 | Semiconductor device and method of forming including superjunction structure formed using angled implant process | Madhur Bobde, Lingpeng Guan, Lei Zhang, Hamza Yilmaz | 2020-08-25 |
| 10644102 | SGT superjunction MOSFET structure | Lingpeng Guan, Madhur Bobde, Jian Wang, Lei Zhang | 2020-05-05 |
| 10580868 | Super-junction corner and termination structure with improved breakdown and robustness | Madhur Bobde, Lingpeng Guan | 2020-03-03 |
| 10446679 | Method for forming a lateral super-junction MOSFET device and termination structure | Madhur Bobde, Lingpeng Guan, Hamza Yilmaz | 2019-10-15 |
| 10276387 | Semiconductor device including superjunction structure formed using angled implant process | Madhur Bobde, Lingpeng Guan, Lei Zhang, Hamza Yilmaz | 2019-04-30 |
| 10243072 | Method for forming a lateral super-junction MOSFET device and termination structure | Madhur Bobde, Lingpeng Guan, Hamza Yilmaz | 2019-03-26 |
| 9991380 | Lateral super-junction MOSFET device and termination structure | Madhur Bobde, Lingpeng Guan, Hamza Yilmaz | 2018-06-05 |
| 9722073 | Lateral super-junction MOSFET device and termination structure | Madhur Bobde, Lingpeng Guan, Hamza Yilmaz | 2017-08-01 |
| 9595609 | Semiconductor device including superjunction structure formed using angled implant process | Madhur Bobde, Lingpeng Guan, Lei Zhang, Hamza Yilmaz | 2017-03-14 |
| 9530885 | Normally on high voltage switch | Madhur Bobde, Hamza Yilmaz, Daniel Calafut | 2016-12-27 |
| 9508805 | Termination design for nanotube MOSFET | Lingpeng Guan, Madhur Bobde, Hamza Yilmaz | 2016-11-29 |
| 9450045 | Method for forming lateral super-junction structure | Madhur Bobde, Lingpeng Guan, Hamza Yilmaz | 2016-09-20 |
| 9397154 | Termination design by metal strapping guard ring trenches shorted to a body region to shrink termination area | Madhur Bobde | 2016-07-19 |
| 9312381 | Lateral super-junction MOSFET device and termination structure | Madhur Bobde, Lingpeng Guan, Hamza Yilmaz | 2016-04-12 |
| 9171949 | Semiconductor device including superjunction structure formed using angled implant process | Madhur Bobde, Lingpeng Guan, Lei Zhang, Hamza Yilmaz | 2015-10-27 |
| 9153653 | Termination design by metal strapping guard ring trenches shorted to a body region to shrink termination area | Madhur Bobde | 2015-10-06 |
| 9082790 | Normally on high voltage switch | Madhur Bobde, Hamza Yilmaz, Daniel Calafut | 2015-07-14 |
| 8907414 | High voltage fast recovery trench diode | Jun Hu, Madhur Bobde, Hamza Yilmaz | 2014-12-09 |