| 10192982 |
Nano MOSFET with trench bottom oxide shielded and third dimensional P-body contact |
Hamza Yilmaz, Daniel Ng, Madhur Bobde, Anup Bhalla, Ji Pan +2 more |
2019-01-29 |
$2,933,000 |
| 10008579 |
MOSFET with integrated schottky diode |
Yeeheng Lee |
2018-06-26 |
$1,081,000 |
| 9748375 |
Nano MOSFET with trench bottom oxide shielded and third dimensional P-body contact |
Hamza Yilmaz, Daniel Ng, Madhur Bobde, Anup Bhalla, Ji Pan +2 more |
2017-08-29 |
$1,998,000 |
| 9673289 |
Dual oxide trench gate power MOSFET using oxide filled trench |
Madhur Bobde, Yeeheng Lee, Hong Chang |
2017-06-06 |
$5,791,000 |
| 9530885 |
Normally on high voltage switch |
Madhur Bobde, Hamza Yilmaz, Karthik Padmanabhan |
2016-12-27 |
$6,117,000 |
| 9484453 |
Device structure and methods of making high density MOSFETs for load switch and DC-DC applications |
Hamza Yilmaz, Madhur Bobde, Hong Chang, Yeeheng Lee, Jongoh Kim +2 more |
2016-11-01 |
$2,626,000 |
| 9450088 |
High density trench-based power MOSFETs with self-aligned active contacts and method for making such devices |
Yeeheng Lee, Hong Chang, Jongoh Kim, Sik Lui, Hamza Yilmaz +2 more |
2016-09-20 |
$1,263,000 |
| 9412733 |
MOSFET with integrated schottky diode |
Yeeheng Lee |
2016-08-09 |
$2,313,000 |
| 9391193 |
Trench-based power semiconductor devices with increased breakdown voltage characteristics |
Joseph A. Yedinak, Ashok Challa, Daniel M. Kinzer, Dean E. Probst |
2016-07-12 |
$8,282,000 |
| 9356022 |
Semiconductor device with termination structure for power MOSFET applications |
Yeeheng Lee, Madhur Bobde, Hamza Yilmaz, Xiaobin Wang, Ji Pan +2 more |
2016-05-31 |
$560,000 |
| 9281394 |
Nano MOSFET with trench bottom oxide shielded and third dimensional P-body contact |
Hamza Yilmaz, Daniel Ng, Madhur Bobde, Anup Bhalla, Ji Pan +2 more |
2016-03-08 |
$536,000 |
| 9281416 |
Trench MOSFET with integrated Schottky barrier diode |
Yi Su, Jongoh Kim, Hong Chang, Hamza Yilmaz, Daniel Ng |
2016-03-08 |
$536,000 |
| 9190478 |
Method for forming dual oxide trench gate power MOSFET using oxide filled trench |
Madhur Bobde, Yeeheng Lee, Hong Chang |
2015-11-17 |
$465,000 |
| 9190512 |
High density trench-based power MOSFETs with self-aligned active contacts and method for making such devices |
Yeeheng Lee, Hong Chang, Jongoh Kim, Sik Lui, Hamza Yilmaz +2 more |
2015-11-17 |
$465,000 |
| 9136370 |
Shielded gate trench MOSFET package |
Sik Lui, Yi Su, Daniel Ng, Anup Bhalla |
2015-09-15 |
$295,000 |
| 9136380 |
Device structure and methods of making high density MOSFETs for load switch and DC-DC applications |
Hamza Yilmaz, Madhur Bobde, Hong Chang, Yeeheng Lee, Jongoh Kim +2 more |
2015-09-15 |
$295,000 |
| 9105494 |
Termination trench for power MOSFET applications |
Yeeheng Lee, Madhur Bodbe, Hamza Yilmaz, Xiaobin Wang, Ji Pan +2 more |
2015-08-11 |
$673,000 |
| 9082790 |
Normally on high voltage switch |
Madhur Bobde, Hamza Yilmaz, Karthik Padmanabhan |
2015-07-14 |
$1,551,000 |
| 8963212 |
Trench-based power semiconductor devices with increased breakdown voltage characteristics |
Joseph A. Yedinak, Ashok Challa, Daniel M. Kinzer, Dean E. Probst |
2015-02-24 |
$15,191,000 |
| 8951867 |
High density trench-based power MOSFETs with self-aligned active contacts and method for making such devices |
Yeeheng Lee, Hong Chang, Jongoh Kim, Sik Lui, Hamza Yilmaz +2 more |
2015-02-10 |
$560,000 |
| 8932924 |
Trench-based power semiconductor devices with increased breakdown voltage characteristics |
Joseph A. Yedinak, Dean E. Probst |
2015-01-13 |
$4,521,000 |
| 8884365 |
Trench-gate field effect transistor |
Hamza Yilmaz, Christopher Boguslaw Kocon, Steven Sapp, Dean E. Probst, Nathan Kraft +5 more |
2014-11-11 |
$4,431,000 |
| 8865540 |
Method for forming a schottky barrier diode integrated with a trench MOSFET |
Yi Su, Jongoh Kim, Hong Chang, Hamza Yilmaz, Daniel Ng |
2014-10-21 |
$510,000 |
| 8829603 |
Shielded gate trench MOSFET package |
Sik Lui, Yi Su, Daniel Ng, Anup Bhalla |
2014-09-09 |
$448,000 |
| 8809948 |
Device structure and methods of making high density MOSFETs for load switch and DC-DC applications |
Hamza Yilmaz, Madhur Bobde, Hong Chang, Yeeheng Lee, Jongoh Kim +2 more |
2014-08-19 |
$694,000 |