Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Nano MOSFET with trench bottom oxide shielded and third dimensional P-body contact

Nano MOSFET with trench bottom oxide shielded and third dimensional P-body contact

US Patent 9281394 · Granted Mar 8, 2016

Estimated economic value: $536,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Shielded trench devices2025
High density shield gate transistor structure and method of making2025
Semiconductor package having wettable lead flanks and tie bars and method of mak2025
Field stop IGBT with grown injection region2025
High voltage edge termination structure for power semiconductor devices2025
High voltage edge termination structure for power semiconductor devices and manu2024
High voltage edge termination structure for power semiconductor devices and manu2024
Bottom source trench MOSFET with shield electrode2024
Back side dopant activation in field stop IGBT2023
Semiconductor package having thin substrate and method of making the same2023
SiC MOSFET with reduced channel length and high Vth2023
IGBT light load efficiency2023