Issued Patents All Time
Showing 1–25 of 172 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 12295166 | High density shield gate transistor structure and method of making | Sik Lui, Lei Zhang, Xiaobin Wang | 2025-05-06 |
| 12261101 | Semiconductor package having wettable lead flanks and tie bars and method of making the same | Yan Xun Xue, Long Wang, Xiaoguang Zeng | 2025-03-25 |
| 11869967 | Bottom source trench MOSFET with shield electrode | Sik Lui, Lingpeng Guan, Lei Zhang | 2024-01-09 |
| 11784141 | Semiconductor package having thin substrate and method of making the same | Jun Lu, Long Wang, Bo-Wei Chen, Shuhua Zhou | 2023-10-10 |
| 11776994 | SiC MOSFET with reduced channel length and high Vth | David Sheridan, Arash Salemi | 2023-10-03 |
| 11756993 | IGBT light load efficiency | Lingpeng Guan, Karthik Padmanabhan, Bum Seok Suh | 2023-09-12 |
| 11749716 | Semiconductor device incorporating epitaxial layer field stop zone | Lei Zhang, Karthik Padmanabhan, Lingpeng Guan, Jian Wang, Lingbing Chen +3 more | 2023-09-05 |
| 11721665 | Wafer level chip scale semiconductor package | Yan Xun Xue, Long Wang, Bo-Wei Chen | 2023-08-08 |
| 11699627 | DMOS FET chip scale package and method of making the same | Yan Xun Xue, Long Wang, Hongyong Xue, Zhiqiang Niu, Jun Lu | 2023-07-11 |
| 11594613 | Sawtooh electric field drift region structure for planar and trench power semiconductor devices | Lingpeng Guan, Anup Bhalla, Hamza Yilmaz | 2023-02-28 |
| 11538933 | Schottky diode integrated into superjunction power MOSFETs | Yi Su | 2022-12-27 |
| 11508819 | Method for forming super-junction corner and termination structure with graded sidewalls | Karthik Padmanabhan, Lingpeng Guan | 2022-11-22 |
| 11495548 | Semiconductor package having thin substrate and method of making the same | Jun Lu, Long Wang, Bo-Wei Chen, Shuhua Zhou | 2022-11-08 |
| 11430762 | Method for semi-wafer level packaging | Yan Xun Xue, Long Wang, Bo-Wei Chen | 2022-08-30 |
| 11417648 | Intelligent power module containing IGBT and super-junction MOSFET | Bum Seok Suh, Zhiqiang Niu, Junho Lee, Xiaojing Xu, Zhaorong Zhuang | 2022-08-16 |
| 11342410 | Improving IGBT light load efficiency | Lingpeng Guan, Karthik Padmanabhan, Bum Seok Suh | 2022-05-24 |
| 11245016 | Silicon carbide trench semiconductor device | David Sheridan, Vipindas Pala | 2022-02-08 |
| 11038022 | Super-junction corner and termination structure with graded sidewalls | Karthik Padmanabhan, Lingpeng Guan | 2021-06-15 |
| 11038037 | Sawtooh electric field drift region structure for planar and trench power semiconductor devices | Lingpeng Guan, Anup Bhalla, Hamza Yilmaz | 2021-06-15 |
| 11031465 | Semiconductor device incorporating epitaxial layer field stop zone | Lei Zhang, Karthik Padmanabhan, Lingpeng Guan, Jian Wang, Lingbing Chen +3 more | 2021-06-08 |
| 10998264 | Dual-gate trench IGBT with buried floating P-type shield | Jun Hu, Hamza Yilmaz | 2021-05-04 |
| 10991680 | Common source land grid array package | Yan Xun Xue, Yueh-Se Ho, Long Wang, Xiaobin Wang, Lin Chen | 2021-04-27 |
| 10931276 | Combined IGBT and superjunction MOSFET device with tuned switching speed | Bum Seok Suh, Lingpeng Guan, Karthik Padmanabhan | 2021-02-23 |
| 10818788 | Schottky diode integrated into superjunction power MOSFETs | Yi Su | 2020-10-27 |
| 10804355 | Dual-gate trench IGBT with buried floating P-type shield | Jun Hu, Hamza Yilmaz | 2020-10-13 |