| 11538933 |
Schottky diode integrated into superjunction power MOSFETs |
Madhur Bobde |
2022-12-27 |
|
| 10818788 |
Schottky diode integrated into superjunction power MOSFETs |
Madhur Bobde |
2020-10-27 |
|
| 10263070 |
Method of manufacturing LV/MV super junction trench power MOSFETs |
Sik Lui |
2019-04-16 |
|
| 9620498 |
Configuration of gate to drain (GD) clamp and ESD protection circuit for power device breakdown protection |
Anup Bhalla, Daniel Ng |
2017-04-11 |
$1,058,000 |
| 9356132 |
Integrating Schottky diode into power MOSFET |
Daniel Ng, Anup Bhalla, Hong Chang, Jongoh Kim, John Chen |
2016-05-31 |
$560,000 |
| 9318603 |
Method of making a low-Rdson vertical power MOSFET device |
Daniel Ng, Anup Bhalla, Jun Lu |
2016-04-19 |
$855,000 |
| 9281416 |
Trench MOSFET with integrated Schottky barrier diode |
Daniel Calafut, Jongoh Kim, Hong Chang, Hamza Yilmaz, Daniel Ng |
2016-03-08 |
$536,000 |
| 9252265 |
Shielded gate trench MOS with improved source pickup layout |
Hong Chang, Wenjun Li, Limin Weng, Gary Chen, Jongoh Kim +1 more |
2016-02-02 |
$682,000 |
| 9136370 |
Shielded gate trench MOSFET package |
Sik Lui, Daniel Ng, Daniel Calafut, Anup Bhalla |
2015-09-15 |
$295,000 |
| 8994101 |
Shielded gate trench MOS with improved source pickup layout |
Hong Chang, Wenjun Li, Limin Weng, Gary Chen, Jongoh Kim +1 more |
2015-03-31 |
$834,000 |
| 8865540 |
Method for forming a schottky barrier diode integrated with a trench MOSFET |
Daniel Calafut, Jongoh Kim, Hong Chang, Hamza Yilmaz, Daniel Ng |
2014-10-21 |
$510,000 |
| 8829603 |
Shielded gate trench MOSFET package |
Sik Lui, Daniel Ng, Daniel Calafut, Anup Bhalla |
2014-09-09 |
$448,000 |
| 8828857 |
Approach to integrate Schottky in MOSFET |
Sik Lui, Daniel Ng, Anup Bhalla |
2014-09-09 |
$448,000 |
| 8802509 |
Configuration of gate to drain (GD) clamp and ESD protection circuit for power device breakdown protection |
Anup Bhalla, Daniel Ng |
2014-08-12 |
$339,000 |
| 8785270 |
Integrating schottky diode into power MOSFET |
Daniel Ng, Anup Bhalla, Hong Chang, Jongoh Kim, John Chen |
2014-07-22 |
$233,000 |
| 8709893 |
Method of making a low-Rdson vertical power MOSFET device |
Daniel Ng, Anup Bhalla, Jun Lu |
2014-04-29 |
$308,000 |
| 8610235 |
Trench MOSFET with integrated Schottky barrier diode |
Daniel Calafut, Jongoh Kim, Hong Chang, Hamza Yilmaz, Daniel Ng |
2013-12-17 |
$819,000 |
| 8502302 |
Integrating Schottky diode into power MOSFET |
Daniel Ng, Anup Bhalla, Hong Chang, Jongoh Kim, John Chen |
2013-08-06 |
$394,000 |
| 8431457 |
Method for fabricating a shielded gate trench MOS with improved source pickup layout |
Hong Chang, Wenjun Li, Limin Weng, Gary Chen, Jongoh Kim +1 more |
2013-04-30 |
$321,000 |
| 8431470 |
Approach to integrate Schottky in MOSFET |
Sik Lui, Daniel Ng, Anup Bhalla |
2013-04-30 |
$321,000 |
| 8354316 |
Reduced mask configuration for power mosfets with electrostatic discharge (ESD) circuit protection |
Anup Bhalla, Xiaobin Wang, Wei-Chuan Wang, Daniel Ng |
2013-01-15 |
|
| 8304315 |
Integration of a sense FET into a discrete power MOSFET |
Anup Bhalla, Daniel Ng |
2012-11-06 |
$549,000 |
| 8053808 |
Layouts for multiple-stage ESD protection circuits for integrating with semiconductor power device |
Anup Bhalla, Daniel Ng, Wei-Chuan Wang, Ji Pan |
2011-11-08 |
$321,000 |
| 7952144 |
Integration of a sense FET into a discrete power MOSFET |
Anup Bhalla, Daniel Ng |
2011-05-31 |
$871,000 |
| 7939882 |
Integration of sense FET into discrete power MOSFET |
Anup Bhalla |
2011-05-10 |
$1,388,000 |