Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Trench MOSFET with integrated Schottky barrier diode

Trench MOSFET with integrated Schottky barrier diode

US Patent 8610235 · Granted Dec 17, 2013

Estimated economic value: $819,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Shielded trench devices2025
Nonvolatile memory device, read method for nonvolatile memory device, and memory2025
Field stop IGBT with grown injection region2025
High voltage edge termination structure for power semiconductor devices2025
High voltage edge termination structure for power semiconductor devices and manu2024
High voltage edge termination structure for power semiconductor devices and manu2024
Back side dopant activation in field stop IGBT2023
Method for forming shielding polysilicon sidewall for protecting shielded gate t2023
Shielded gate trench MOSFET devices2023
Shielded gate trench MOSFET devices2023
Shielded gate trench MOSFET devices2023
Sawtooh electric field drift region structure for planar and trench power semico2023