Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Integration of a sense FET into a discrete power MOSFET

Integration of a sense FET into a discrete power MOSFET

US Patent 8304315 · Granted Nov 6, 2012

Estimated economic value: $549,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Reusable wide bandgap semiconductor substrate2023
Sawtooh electric field drift region structure for planar and trench power semico2023
Schottky diode integrated into superjunction power MOSFETs2022
Double-sided chip stack assembly2021
Sawtooh electric field drift region structure for planar and trench power semico2021
MOS device with island region2021
Device structure and manufacturing method using HDP deposited source-body implan2021
Reusable wide bandgap semiconductor substrate2020
Schottky diode integrated into superjunction power MOSFETs2020
Vertical trench DMOSFET having integrated implants forming enhancement diodes in2020
Nano-tube MOSFET technology and devices2020
Nano-tube MOSFET technology and devices2020