Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Approach to integrate Schottky in MOSFET

Approach to integrate Schottky in MOSFET

US Patent 8431470 · Granted Apr 30, 2013

Estimated economic value: $321,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

High density shield gate transistor structure and method of making2025
Bottom source trench MOSFET with shield electrode2024
Reusable wide bandgap semiconductor substrate2023
Sawtooh electric field drift region structure for planar and trench power semico2023
Schottky diode integrated into superjunction power MOSFETs2022
Double-sided chip stack assembly2021
Sawtooh electric field drift region structure for planar and trench power semico2021
Bidirectional switch having back to back field effect transistors2021
MOS device with island region2021
Device structure and manufacturing method using HDP deposited source-body implan2021
Device structure and manufacturing method using HDP deposited source-body implan2021
Reusable wide bandgap semiconductor substrate2020