Issued Patents All Time
Showing 51–75 of 172 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 10032861 | Semiconductor device with field threshold MOSFET for high voltage termination | Hamza Yilmaz | 2018-07-24 |
| 9997593 | Power trench MOSFET with improved unclamped inductive switching (UIS) performance and preparation method thereof | Yongping Ding, Hamza Yilmaz, Xiaobin Wang | 2018-06-12 |
| 9991380 | Lateral super-junction MOSFET device and termination structure | Lingpeng Guan, Karthik Padmanabhan, Hamza Yilmaz | 2018-06-05 |
| 9978740 | Uni-directional transient voltage suppressor (TVS) | Lingpeng Guan, Anup Bhalla | 2018-05-22 |
| 9911728 | Transient voltage suppressor (TVS) with reduced breakdown voltage | Ning Shi, Lingpeng Guan | 2018-03-06 |
| 9882049 | Self-aligned slotted accumulation-mode field effect transistor (AccuFET) structure and method | Francois Hebert, Anup Bhalla | 2018-01-30 |
| 9876096 | Integrating enhancement mode depleted accumulation/inversion channel devices with MOSFETs | Sik Lui, Hamza Yilmaz, Jongoh Kim, Daniel Ng | 2018-01-23 |
| 9876073 | Integrated Schottky diode in high voltage semiconductor device | Lingpeng Guan, Anup Bhalla, TingGang Zhu | 2018-01-23 |
| 9865678 | High voltage field balance metal oxide field effect transistor (FBM) | Anup Bhalla, Hamza Yilmaz, Lingpeng Guan, Jun Hu, Jongoh Kim +1 more | 2018-01-09 |
| 9865694 | Split-gate trench power mosfet with protected shield oxide | Yeeheng Lee, Lingpeng Guan, Hongyong Xue, Yiming Gu, Yang Xiang +6 more | 2018-01-09 |
| 9818829 | Split poly connection via through-poly-contact (TPC) in split-gate based power MOSFETs | Yeeheng Lee, Sik Lui, Jongoh Kim, Hong Chang, Lingpeng Guan +1 more | 2017-11-14 |
| 9793346 | Semiconductor device with threshold MOSFET for high voltage termination | Hamza Yilmaz | 2017-10-17 |
| 9793256 | Optimized configurations to integrate steering diodes in low capacitance transient voltage suppressor (TVS) | — | 2017-10-17 |
| 9793254 | TVS structures for high surge and low capacitance | Wenjiang Zeng, Limin Weng | 2017-10-17 |
| 9755052 | Process method and structure for high voltage MOSFETS | Yongping Ding, Sik Lui, Lei Zhang, Jongoh Kim, John Chen | 2017-09-05 |
| 9748375 | Nano MOSFET with trench bottom oxide shielded and third dimensional P-body contact | Hamza Yilmaz, Daniel Ng, Daniel Calafut, Anup Bhalla, Ji Pan +2 more | 2017-08-29 |
| 9748346 | Circuit configuration and manufacturing processes for vertical transient voltage suppressor (TVS) and EMI filter | Shekar Mallikarjunaswamy | 2017-08-29 |
| 9741808 | Split-gate trench power MOSFET with protected shield oxide | Yeeheng Lee, Lingpeng Guan, Hongyong Xue, Yiming Gu, Yang Xiang +6 more | 2017-08-22 |
| 9722073 | Lateral super-junction MOSFET device and termination structure | Lingpeng Guan, Karthik Padmanabhan, Hamza Yilmaz | 2017-08-01 |
| 9716166 | Transistor structure with improved unclamped inductive switching immunity | Wenjie Zhang, Qufei Chen, Kyle Terrill | 2017-07-25 |
| 9704948 | Power trench MOSFET with improved unclamped inductive switching (UIS) performance and preparation method thereof | Yongping Ding, Hamza Yilmaz, Xiaobin Wang | 2017-07-11 |
| 9685523 | Diode structures with controlled injection efficiency for fast switching | Harsh Naik, Lingpeng Guan, Anup Bhalla, Sik Lui | 2017-06-20 |
| 9673289 | Dual oxide trench gate power MOSFET using oxide filled trench | Daniel Calafut, Yeeheng Lee, Hong Chang | 2017-06-06 |
| 9666666 | Dual-gate trench IGBT with buried floating P-type shield | Jun Hu, Hamza Yilmaz | 2017-05-30 |
| 9647059 | Manufacturing methods for accurately aligned and self-balanced superjunction devices | Lingping Guan, Anup Bhalla, Yeeheng Lee, John Chen, Moses Ho | 2017-05-09 |