Issued Patents All Time
Showing 1–25 of 46 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 10424654 | Power device with high aspect ratio trench contacts and submicron pitches between trenches | Wenjun Li, Paul Thorup, Hong Chang, Yang Xiang, Jowei Dun +2 more | 2019-09-24 |
| 10297594 | High density MOSFET array with self-aligned contacts delimited by nitride-capped trench gate stacks and method | Jongoh Kim, Hong Chang | 2019-05-21 |
| 10192982 | Nano MOSFET with trench bottom oxide shielded and third dimensional P-body contact | Hamza Yilmaz, Daniel Ng, Daniel Calafut, Madhur Bobde, Anup Bhalla +2 more | 2019-01-29 |
| 10020380 | Power device with high aspect ratio trench contacts and submicron pitches between trenches | Wenjun Li, Paul Thorup, Hong Chang, Yang Xiang, Jowei Dun +2 more | 2018-07-10 |
| 10008579 | MOSFET with integrated schottky diode | Daniel Calafut | 2018-06-26 |
| 9865694 | Split-gate trench power mosfet with protected shield oxide | Lingpeng Guan, Hongyong Xue, Yiming Gu, Yang Xiang, Terence Huang +6 more | 2018-01-09 |
| 9818829 | Split poly connection via through-poly-contact (TPC) in split-gate based power MOSFETs | Sik Lui, Jongoh Kim, Hong Chang, Madhur Bobde, Lingpeng Guan +1 more | 2017-11-14 |
| 9748375 | Nano MOSFET with trench bottom oxide shielded and third dimensional P-body contact | Hamza Yilmaz, Daniel Ng, Daniel Calafut, Madhur Bobde, Anup Bhalla +2 more | 2017-08-29 |
| 9741808 | Split-gate trench power MOSFET with protected shield oxide | Lingpeng Guan, Hongyong Xue, Yiming Gu, Yang Xiang, Terence Huang +6 more | 2017-08-22 |
| 9673289 | Dual oxide trench gate power MOSFET using oxide filled trench | Daniel Calafut, Madhur Bobde, Hong Chang | 2017-06-06 |
| 9647059 | Manufacturing methods for accurately aligned and self-balanced superjunction devices | Lingping Guan, Madhur Bobde, Anup Bhalla, John Chen, Moses Ho | 2017-05-09 |
| 9627526 | Assymetric poly gate for optimum termination design in trench power MOSFETs | Yongping Ding, Xiaobin Wang | 2017-04-18 |
| 9595587 | Split poly connection via through-poly-contact (TPC) in split-gate based power MOSFETs | Sik Lui, Jongoh Kim, Hong Chang, Madhur Bobde, Lingpeng Guan +1 more | 2017-03-14 |
| 9484453 | Device structure and methods of making high density MOSFETs for load switch and DC-DC applications | Hamza Yilmaz, Madhur Bobde, Hong Chang, Daniel Calafut, Jongoh Kim +2 more | 2016-11-01 |
| 9450050 | Lateral super junctions with high substrate breakdown and build in avalanche clamp diode | Madhur Bobde, Anup Bhalla, Hamza Yilmaz, Wilson Ma, Lingping Guan +1 more | 2016-09-20 |
| 9450088 | High density trench-based power MOSFETs with self-aligned active contacts and method for making such devices | Hong Chang, Jongoh Kim, Sik Lui, Hamza Yilmaz, Madhur Bobde +2 more | 2016-09-20 |
| 9431495 | Method of forming SGT MOSFETs with improved termination breakdown voltage | Yongping Ding, Xiaobin Wang, Madhur Bobde | 2016-08-30 |
| 9412733 | MOSFET with integrated schottky diode | Daniel Calafut | 2016-08-09 |
| 9401409 | High density MOSFET array with self-aligned contacts enhancement plug and method | Jongoh Kim, Hong Chang | 2016-07-26 |
| 9356022 | Semiconductor device with termination structure for power MOSFET applications | Madhur Bobde, Daniel Calafut, Hamza Yilmaz, Xiaobin Wang, Ji Pan +2 more | 2016-05-31 |
| 9281394 | Nano MOSFET with trench bottom oxide shielded and third dimensional P-body contact | Hamza Yilmaz, Daniel Ng, Daniel Calafut, Madhur Bobde, Anup Bhalla +2 more | 2016-03-08 |
| 9281368 | Split-gate trench power MOSFET with protected shield oxide | Lingpeng Guan, Hongyong Xue, Yiming Gu, Yang Xiang, Terence Huang +6 more | 2016-03-08 |
| 9196701 | High density MOSFET array with self-aligned contacts enhancement plug and method | Jongoh Kim, Hong Chang | 2015-11-24 |
| 9190512 | High density trench-based power MOSFETs with self-aligned active contacts and method for making such devices | Hong Chang, Jongoh Kim, Sik Lui, Hamza Yilmaz, Madhur Bobde +2 more | 2015-11-17 |
| 9190478 | Method for forming dual oxide trench gate power MOSFET using oxide filled trench | Daniel Calafut, Madhur Bobde, Hong Chang | 2015-11-17 |