Issued Patents All Time
Showing 26–46 of 46 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 9136377 | High density MOSFET array with self-aligned contacts delimited by nitride-capped trench gate stacks and method | Jongoh Kim, Hong Chang | 2015-09-15 |
| 9136380 | Device structure and methods of making high density MOSFETs for load switch and DC-DC applications | Hamza Yilmaz, Madhur Bobde, Hong Chang, Daniel Calafut, Jongoh Kim +2 more | 2015-09-15 |
| 9105494 | Termination trench for power MOSFET applications | Madhur Bodbe, Daniel Calafut, Hamza Yilmaz, Xiaobin Wang, Ji Pan +2 more | 2015-08-11 |
| 9000514 | Fabrication of trench DMOS device having thick bottom shielding oxide | Sung-Shan Tai, Hong Chang, John Chen | 2015-04-07 |
| 8969953 | Method of forming a self-aligned charge balanced power DMOS | John Chen, Lingpeng Guan, Moses Ho, Wilson Ma, Anup Bhalla +1 more | 2015-03-03 |
| 8951867 | High density trench-based power MOSFETs with self-aligned active contacts and method for making such devices | Hong Chang, Jongoh Kim, Sik Lui, Hamza Yilmaz, Madhur Bobde +2 more | 2015-02-10 |
| 8809948 | Device structure and methods of making high density MOSFETs for load switch and DC-DC applications | Hamza Yilmaz, Madhur Bobde, Hong Chang, Daniel Calafut, Jongoh Kim +2 more | 2014-08-19 |
| 8803251 | Termination of high voltage (HV) devices with new configurations and methods | Madhur Bobde, Yongping Ding, Jongoh Kim, Anup Bhalla | 2014-08-12 |
| 8785278 | Nano MOSFET with trench bottom oxide shielded and third dimensional P-body contact | Hamza Yilmaz, Daniel Ng, Daniel Calafut, Madhur Bobde, Anup Bhalla +2 more | 2014-07-22 |
| 8785306 | Manufacturing methods for accurately aligned and self-balanced superjunction devices | Lingpeng Guan, Madhur Bobde, Anup Bhalla, John Chen, Moses Ho | 2014-07-22 |
| 8697520 | Method of forming an asymmetric poly gate for optimum termination design in trench power MOSFETS | Yongping Ding, Xiaobin Wang | 2014-04-15 |
| 8587061 | Power MOSFET device with self-aligned integrated Schottky diode | Yongping Ding, John Chen | 2013-11-19 |
| 8575695 | Lateral super junction device with high substrate-drain breakdown and built-in avalanche clamp diode | Madhur Bobde, Anup Bhalla, Hamza Yilmaz, Wilson Ma, Lingpeng Guan +1 more | 2013-11-05 |
| 8519476 | Method of forming a self-aligned charge balanced power DMOS | John Chen, Lingpeng Guan, Moses Ho, Wilson Ma, Anup Bhalla +1 more | 2013-08-27 |
| 8390058 | Configurations and methods for manufacturing devices with trench-oxide-nano-tube super-junctions | Hamza Yilmaz, Madhur Bobde, Lingpeng Guan, Xiaobin Wang, John Chen +1 more | 2013-03-05 |
| 8252647 | Fabrication of trench DMOS device having thick bottom shielding oxide | Sung-Shan Tai, Hong Chang, John Chen | 2012-08-28 |
| 8252648 | Power MOSFET device with self-aligned integrated Schottky and its manufacturing method | Yongping Ding, John Chen | 2012-08-28 |
| 8247297 | Method of filling large deep trench with high quality oxide for semiconductor devices | Xiaobin Wang, Anup Bhalla | 2012-08-21 |
| 7892924 | Method for making a charge balanced multi-nano shell drift region for superjunction semiconductor device | Moses Ho, Lingpeng Guan | 2011-02-22 |
| 7879676 | High density trench mosfet with single mask pre-defined gate and contact trenches | Hong Chang, Tiesheng Li, John Chen, Anup Bhalla | 2011-02-01 |
| 7767526 | High density trench MOSFET with single mask pre-defined gate and contact trenches | Hong Chang, Tiesheng Li, John Chen, Anup Bhalla | 2010-08-03 |