Issued Patents All Time
Showing 1–22 of 22 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 12371390 | Modified calcium silicate board and surface treatment method and application thereof | Haibing Gu | 2025-07-29 |
| 10665711 | High-electron-mobility transistor with buried interconnect | Ayman Shibib, Kyle Terrill, Jinman YANG | 2020-05-26 |
| 10522666 | Methods for fabricating anode shorted field stop insulated gate bipolar transistor | Anup Bhalla, Madhur Bobde, Xiaotian Zhang, Yueh-Se Ho | 2019-12-31 |
| 10381473 | High-electron-mobility transistor with buried interconnect | Ayman Shibib, Kyle Terrill, Jinman YANG | 2019-08-13 |
| 10115814 | Process method and structure for high voltage MOSFETs | Lei Zhang, Hong Chang, Jongoh Kim, John Chen | 2018-10-30 |
| 10050134 | Methods for fabricating anode shorted field stop insulated gate bipolar transistor | Anup Bhalla, Madhur Bobde, Xiaotian Zhang, Yueh-Se Ho | 2018-08-14 |
| 9997593 | Power trench MOSFET with improved unclamped inductive switching (UIS) performance and preparation method thereof | Hamza Yilmaz, Xiaobin Wang, Madhur Bobde | 2018-06-12 |
| 9887283 | Process method and structure for high voltage MOSFETs | Lei Zhang, Hong Chang, Jongoh Kim, John Chen | 2018-02-06 |
| 9865678 | High voltage field balance metal oxide field effect transistor (FBM) | Anup Bhalla, Hamza Yilmaz, Madhur Bobde, Lingpeng Guan, Jun Hu +1 more | 2018-01-09 |
| 9755052 | Process method and structure for high voltage MOSFETS | Sik Lui, Madhur Bobde, Lei Zhang, Jongoh Kim, John Chen | 2017-09-05 |
| 9704948 | Power trench MOSFET with improved unclamped inductive switching (UIS) performance and preparation method thereof | Hamza Yilmaz, Xiaobin Wang, Madhur Bobde | 2017-07-11 |
| 9627526 | Assymetric poly gate for optimum termination design in trench power MOSFETs | Yeeheng Lee, Xiaobin Wang | 2017-04-18 |
| 9478646 | Methods for fabricating anode shorted field stop insulated gate bipolar transistor | Anup Bhalla, Madhur Bobde, Xiaotian Zhang, Yueh-Se Ho | 2016-10-25 |
| 9450083 | High voltage field balance metal oxide field effect transistor (FBM) | Anup Bhalla, Hamza Yilmaz, Madhur Bobde, Lingpeng Guan, Jun Hu +1 more | 2016-09-20 |
| 9431495 | Method of forming SGT MOSFETs with improved termination breakdown voltage | Yeeheng Lee, Xiaobin Wang, Madhur Bobde | 2016-08-30 |
| 9129822 | High voltage field balance metal oxide field effect transistor (FBM) | Anup Bhalla, Hamza Yilmaz, Madhur Bobde, Lingpeng Guan, Jun Hu +1 more | 2015-09-08 |
| 8803251 | Termination of high voltage (HV) devices with new configurations and methods | Yeeheng Lee, Madhur Bobde, Jongoh Kim, Anup Bhalla | 2014-08-12 |
| 8785279 | High voltage field balance metal oxide field effect transistor (FBM) | Anup Bhalla, Hamza Yilmaz, Madhur Bobde, Lingpeng Guan, Jun Hu +1 more | 2014-07-22 |
| 8716069 | Semiconductor device employing aluminum alloy lead-frame with anodized aluminum | Yan Xun Xue, Yueh-Se Ho | 2014-05-06 |
| 8697520 | Method of forming an asymmetric poly gate for optimum termination design in trench power MOSFETS | Yeeheng Lee, Xiaobin Wang | 2014-04-15 |
| 8587061 | Power MOSFET device with self-aligned integrated Schottky diode | Yeeheng Lee, John Chen | 2013-11-19 |
| 8252648 | Power MOSFET device with self-aligned integrated Schottky and its manufacturing method | Yeeheng Lee, John Chen | 2012-08-28 |