Issued Patents All Time
Showing 1–10 of 10 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 12191385 | Semiconductor device having a current spreading region | Adrian Finney, Ingmar Neumann | 2025-01-07 |
| 12159933 | Semiconductor device with semiconductor mesas between adjacent gate trenches | Anita Brazzale, Robert Haase, Sylvain Leomant | 2024-12-03 |
| 12119400 | Semiconductor transistor device and method of manufacturing the same | Robert Haase, Jyotshna Bhandari, Heimo Hofer, Ling Ma, Ashita Mirchandani +3 more | 2024-10-15 |
| 11777026 | Power semiconductor device having low-k dielectric gaps between adjacent metal contacts | Anita Brazzale, Robert Haase, Sylvain Leomant | 2023-10-03 |
| 11316043 | Semiconductor transistor device and method of manufacturing the same | Robert Haase, Jyotshna Bhandari, Heimo Hofer, Ling Ma, Ashita Mirchandani +3 more | 2022-04-26 |
| 10868173 | Semiconductor device having an edge termination area with trench electrodes at different electric potentials, and method for manufacturing thereof | Cedric Ouvrard, Adam Amali, Oliver Blank, Michael Hutzler, David Laforet +2 more | 2020-12-15 |
| 10727331 | Semiconductor device having a reduced surface doping in an edge termination area, and method for manufacturing thereof | Cedric Ouvrard, Adam Amali, Oliver Blank, Michael Hutzler, David Laforet +2 more | 2020-07-28 |
| 9685523 | Diode structures with controlled injection efficiency for fast switching | Madhur Bobde, Lingpeng Guan, Anup Bhalla, Sik Lui | 2017-06-20 |
| 9590096 | Vertical FET having reduced on-resistance | Timothy Henson, Niraj Ranjan | 2017-03-07 |
| 8933506 | Diode structures with controlled injection efficiency for fast switching | Madhur Bobde, Lingpeng Guan, Anup Bhalla, Sik Lui | 2015-01-13 |