Issued Patents All Time
Showing 1–25 of 31 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 12199102 | Isolation structure for separating different transistor regions on the same semiconductor die | Ling Ma, Timothy Henson | 2025-01-14 |
| 12191296 | Method of producing a multi-chip assembly | Ling Ma, Timothy Henson | 2025-01-07 |
| 12159933 | Semiconductor device with semiconductor mesas between adjacent gate trenches | Anita Brazzale, Sylvain Leomant, Harsh Naik | 2024-12-03 |
| 12119400 | Semiconductor transistor device and method of manufacturing the same | Jyotshna Bhandari, Heimo Hofer, Ling Ma, Ashita Mirchandani, Harsh Naik +3 more | 2024-10-15 |
| 11777026 | Power semiconductor device having low-k dielectric gaps between adjacent metal contacts | Anita Brazzale, Sylvain Leomant, Harsh Naik | 2023-10-03 |
| 11545545 | Superjunction device with oxygen inserted Si-layers | Martin Poelzl, Sylvain Leomant, Maximilian Roesch, Ravi Keshav Joshi, Andreas Meiser +2 more | 2023-01-03 |
| 11393907 | Transistor device with buried field electrode connection | — | 2022-07-19 |
| 11316043 | Semiconductor transistor device and method of manufacturing the same | Jyotshna Bhandari, Heimo Hofer, Ling Ma, Ashita Mirchandani, Harsh Naik +3 more | 2022-04-26 |
| 11217690 | Trench field electrode termination structure for transistor devices | Ashita Mirchandani, Tim Henson, Ling Ma, Niraj Ranjan | 2022-01-04 |
| 11031466 | Method of forming oxygen inserted Si-layers in power semiconductor devices | Martin Poelzl, Maximilian Roesch, Sylvain Leomant, Andreas Meiser, Bernhard Goller +1 more | 2021-06-08 |
| 10991812 | Transistor device with a rectifier element between a field electrode and a source electrode | Ralf Siemieniec, Gerhard Noebauer, Martin Poelzl | 2021-04-27 |
| 10868172 | Vertical power devices with oxygen inserted Si-layers | Oliver Blank, Thomas Feil, Maximilian Roesch, Martin Poelzl, Sylvain Leomant +2 more | 2020-12-15 |
| 10861966 | Vertical trench power devices with oxygen inserted Si-layers | Thomas Feil, Martin Poelzl, Maximilian Roesch, Sylvain Leomant, Bernhard Goller +1 more | 2020-12-08 |
| 10790353 | Semiconductor device with superjunction and oxygen inserted Si-layers | Martin Poelzl, Sylvain Leomant, Maximilian Roesch, Ravi Keshav Joshi, Andreas Meiser +2 more | 2020-09-29 |
| 10741638 | Oxygen inserted Si-layers for reduced substrate dopant outdiffusion in power devices | Martin Poelzl, Maximilian Roesch, Sylvain Leomant, Andreas Meiser, Bernhard Goller +1 more | 2020-08-11 |
| 10580888 | Oxygen inserted Si-layers for reduced contact implant outdiffusion in vertical power devices | Oliver Blank, Thomas Feil, Maximilian Roesch, Martin Poelzl, Sylvain Leomant +2 more | 2020-03-03 |
| 10573742 | Oxygen inserted Si-layers in vertical trench power devices | Thomas Feil, Martin Poelzl, Maximilian Roesch, Sylvain Leomant, Bernhard Goller +1 more | 2020-02-25 |
| 10510836 | Gate trench device with oxygen inserted si-layers | Martin Poelzl, Maximilian Roesch, Sylvain Leomant, Andreas Meiser | 2019-12-17 |
| 10236352 | Method for manufacturing a semiconductor device | Martin Vielemeyer | 2019-03-19 |
| 9991347 | Semiconductor device having a cavity | Timothy Henson | 2018-06-05 |
| 9966464 | Method of forming a semiconductor structure having integrated snubber resistance | Kapil Kelkar, Timothy Henson, Ling Ma, Mary Bigglestone, Adam Amali +1 more | 2018-05-08 |
| 9812535 | Method for manufacturing a semiconductor device and power semiconductor device | Martin Vielemeyer | 2017-11-07 |
| 9691864 | Semiconductor device having a cavity and method for manufacturing thereof | Timothy Henson | 2017-06-27 |
| 9627328 | Semiconductor structure having integrated snubber resistance | Kapil Kelkar, Timothy Henson, Ling Ma, Mary Bigglestone, Adam Amali +1 more | 2017-04-18 |
| 9620583 | Power semiconductor device with source trench and termination trench implants | Kapil Kelkar, Timothy Henson, Ling Ma, Mary Bigglestone, Adam Amali +1 more | 2017-04-11 |