Issued Patents All Time
Showing 1–25 of 36 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 11881512 | Method of manufacturing semiconductor device with silicon carbide body | Ralf Siemieniec, Thomas Aichinger, Romain Esteve, Shiqin Niu | 2024-01-23 |
| 11842938 | Semiconductor device and method for forming a semiconductor device | Jens Peter Konrath, Wolfgang Bergner, Romain Esteve, Richard Gaisberger, Florian Grasse +7 more | 2023-12-12 |
| 11545545 | Superjunction device with oxygen inserted Si-layers | Martin Poelzl, Robert Haase, Sylvain Leomant, Maximilian Roesch, Andreas Meiser +2 more | 2023-01-03 |
| 11387095 | Passivation structuring and plating for semiconductor devices | Andreas Behrendt, Richard Gaisberger, Anita Satz, Johanna Schlaminger, Johann Schmid +2 more | 2022-07-12 |
| 11367683 | Silicon carbide device and method for forming a silicon carbide device | Edward Fuergut, Ralf Siemieniec, Thomas Basler, Martin Gruber, Jochen Hilsenbeck +3 more | 2022-06-21 |
| 11217500 | Semiconductor device and method for forming a semiconductor device | Jens Peter Konrath, Wolfgang Bergner, Romain Esteve, Richard Gaisberger, Florian Grasse +7 more | 2022-01-04 |
| 11195921 | Semiconductor device with silicon carbide body | Ralf Siemieniec, Thomas Aichinger, Romain Esteve, Shiqin Niu | 2021-12-07 |
| 11031466 | Method of forming oxygen inserted Si-layers in power semiconductor devices | Martin Poelzl, Robert Haase, Maximilian Roesch, Sylvain Leomant, Andreas Meiser +1 more | 2021-06-08 |
| 10978395 | Method of manufacturing a semiconductor device having a power metallization structure | Rainer Pelzer, Axel Bürke, Sven Schmidbauer, Michael Nelhiebel | 2021-04-13 |
| 10910309 | Nanotube structure based metal damascene process | Juergen Steinbrenner | 2021-02-02 |
| 10861966 | Vertical trench power devices with oxygen inserted Si-layers | Thomas Feil, Robert Haase, Martin Poelzl, Maximilian Roesch, Sylvain Leomant +1 more | 2020-12-08 |
| 10790353 | Semiconductor device with superjunction and oxygen inserted Si-layers | Martin Poelzl, Robert Haase, Sylvain Leomant, Maximilian Roesch, Andreas Meiser +2 more | 2020-09-29 |
| 10777506 | Silicon carbide semiconductor device having a metal adhesion and barrier structure and a method of forming such a semiconductor device | Frank Hille, Michael Fugger, Oliver Humbel, Thomas Laska, Matthias Müller +6 more | 2020-09-15 |
| 10749216 | Battery, integrated circuit and method of manufacturing a battery | Alexander Breymesser, Bernhard Goller, Kamil Karlovsky, Francisco Javier Santos Rodriguez, Peter Zorn | 2020-08-18 |
| 10741638 | Oxygen inserted Si-layers for reduced substrate dopant outdiffusion in power devices | Martin Poelzl, Robert Haase, Maximilian Roesch, Sylvain Leomant, Andreas Meiser +1 more | 2020-08-11 |
| 10734320 | Power metallization structure for semiconductor devices | Rainer Pelzer, Axel Buerke, Sven Schmidbauer, Michael Nelhiebel | 2020-08-04 |
| 10580878 | SiC device with buried doped region | Rudolf Elpelt, Romain Esteve | 2020-03-03 |
| 10573742 | Oxygen inserted Si-layers in vertical trench power devices | Thomas Feil, Robert Haase, Martin Poelzl, Maximilian Roesch, Sylvain Leomant +1 more | 2020-02-25 |
| 10475743 | Semiconductor device having a metal adhesion and barrier structure and a method of forming such a semiconductor device | Frank Hille, Michael Fugger, Oliver Humbel, Thomas Laska, Matthias Mueller +6 more | 2019-11-12 |
| 10347491 | Forming recombination centers in a semiconductor device | Wolfgang Jantscher, Alexander Binter, Oliver Blank, Petra Fischer, Kurt Pekoll +5 more | 2019-07-09 |
| 10325803 | Semiconductor wafer and method for processing a semiconductor wafer | Matthias Kuenle, Gerhard Schmidt, Martin Sporn, Markus Kahn, Juergen Steinbrenner | 2019-06-18 |
| 10256097 | Forming a metal contact layer on silicon carbide and semiconductor device with metal contact structure | Romain Esteve, Roland Rupp, Francisco Javier Santos Rodriguez, Gerald Unegg | 2019-04-09 |
| 10121859 | Method of manufacturing semiconductor devices with transistor cells and semiconductor device | Johannes Baumgartl, Oliver Blank, Oliver Hellmund, Martin Poelzl | 2018-11-06 |
| 10049879 | Self aligned silicon carbide contact formation using protective layer | Romain Esteve, Markus Kahn, Kurt Pekoll, Juergen Steinbrenner, Gerald Unegg | 2018-08-14 |
| 10043750 | Nanotube structure based metal damascene process | Juergen Steinbrenner | 2018-08-07 |