Issued Patents All Time
Showing 1–25 of 137 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 12426350 | Semiconductor device with diode chain connected to gate metallization | Joachim Weyers, Anton Mauder, Guang Zeng | 2025-09-23 |
| 12419096 | Transistor device and method of manufacturing | Ingo Muri, Till Schloesser, Hans-Joachim Schulze, Olaf Storbeck | 2025-09-16 |
| 12408410 | Silicon carbide device with stripe-shaped gate electrode and source metallization | Dethard Peters | 2025-09-02 |
| 12295156 | Semiconductor device including trench gate structure and buried shielding region and method of manufacturing | Wolfgang Jantscher, David Kammerlander | 2025-05-06 |
| 12057473 | Silicon carbide device with transistor cell and clamp regions in a well region | Wolfgang Jantscher, David Kammerlander, Dethard Peters, Joachim Weyers | 2024-08-06 |
| 11961904 | Semiconductor device including trench gate structure and buried shielding region and method of manufacturing | Wolfgang Jantscher, David Kammerlander | 2024-04-16 |
| 11881512 | Method of manufacturing semiconductor device with silicon carbide body | Thomas Aichinger, Romain Esteve, Ravi Keshav Joshi, Shiqin Niu | 2024-01-23 |
| 11876133 | Silicon carbide device with transistor cell and clamp region | Joachim Weyers, Franz Hirler, Wolfgang Jantscher, David Kammerlander | 2024-01-16 |
| 11869840 | Silicon carbide device and method for forming a silicon carbide device | Dethard Peters, Roland Rupp | 2024-01-09 |
| 11855147 | Method for producing a silicon carbide semiconductor component | Wolfgang Bergner | 2023-12-26 |
| 11848379 | MOSFET having a drift region with a graded doping profile and methods of manufacturing thereof | David Laforet, Cedric Ouvrard | 2023-12-19 |
| 11742391 | Semiconductor component having a diode structure in a SiC semiconductor body | Thomas Basler, Hans-Joachim Schulze | 2023-08-29 |
| 11735633 | Silicon carbide device with trench gate structure and method of manufacturing | Rudolf Elpelt, Anton Mauder | 2023-08-22 |
| 11682703 | Method of producing a semiconductor device having spicular-shaped field plate structures and a current spread region | Michael Hutzler | 2023-06-20 |
| 11670684 | Semiconductor transistor device and method of manufacturing the same | Li Juin Yip, Oliver Blank, Heimo Hofer, Michael Hutzler | 2023-06-06 |
| 11626477 | Silicon carbide field-effect transistor including shielding areas | Thomas Aichinger, Thomas Basler, Wolfgang Bergner, Rudolf Elpelt, Romain Esteve +5 more | 2023-04-11 |
| 11600723 | Transistor device and method of fabricating a gate of a transistor device | Ingmar Neumann, Michael Hutzler, David Laforet, Roland Moennich | 2023-03-07 |
| 11462620 | Semiconductor device having a transistor cell region and a termination region with needle-shaped field plate structures | Oliver Blank, Franz Hirler, Michael Hutzler, David Laforet, Cedric Ouvrard +1 more | 2022-10-04 |
| 11462611 | SiC device with channel regions extending along at least one of the (1-100) plane and the (-1100) plane and methods of manufacturing thereof | Thomas Aichinger, Wolfgang Bergner, Paul Ellinghaus, Rudolf Elpelt, Romain Esteve +5 more | 2022-10-04 |
| 11417747 | Transistor device with a varying gate runner resistivity per area | Thomas Aichinger, Wolfgang Bergner, Frank Wolter | 2022-08-16 |
| 11367683 | Silicon carbide device and method for forming a silicon carbide device | Edward Fuergut, Ravi Keshav Joshi, Thomas Basler, Martin Gruber, Jochen Hilsenbeck +3 more | 2022-06-21 |
| 11342433 | Silicon carbide devices, semiconductor devices and methods for forming silicon carbide devices and semiconductor devices | Thomas Aichinger, Iris Moder, Francisco Javier Santos Rodriguez, Hans-Joachim Schulze, Carsten von Koblinski | 2022-05-24 |
| 11296218 | Semiconductor device | Adam Amali, Michael Hutzler, Laszlo Juhasz, David Laforet, Cedric Ouvrard +1 more | 2022-04-05 |
| 11211468 | Silicon carbide device with trench gate structure and method of manufacturing | Wolfgang Jantscher, David Kammerlander | 2021-12-28 |
| 11195921 | Semiconductor device with silicon carbide body | Thomas Aichinger, Romain Esteve, Ravi Keshav Joshi, Shiqin Niu | 2021-12-07 |