Issued Patents All Time
Showing 1–25 of 30 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 12166080 | Semiconductor transistor device having a titled body contact area and method of manufacturing the same | Oliver Blank, Heimo Hofer, Michael Hutzler, Thomas Ralf Siemieniec | 2024-12-10 |
| 11764272 | Semiconductor device and method of manufacturing the same | David Laforet, Cesar Augusto Braz, Alessandro Ferrara, Cedric Ouvrard | 2023-09-19 |
| 11699725 | Semiconductor device having an alignment layer with mask pits | Martin Poelzl, Oliver Blank, Franz Hirler, Maximilian Roesch | 2023-07-11 |
| 11670684 | Semiconductor transistor device and method of manufacturing the same | Oliver Blank, Heimo Hofer, Michael Hutzler, Ralf Siemieniec | 2023-06-06 |
| 11462620 | Semiconductor device having a transistor cell region and a termination region with needle-shaped field plate structures | Ralf Siemieniec, Oliver Blank, Franz Hirler, Michael Hutzler, David Laforet +1 more | 2022-10-04 |
| 11296218 | Semiconductor device | Ralf Siemieniec, Adam Amali, Michael Hutzler, Laszlo Juhasz, David Laforet +1 more | 2022-04-05 |
| 10903321 | Semiconductor device and method of manufacturing a semiconductor device using an alignment layer | Martin Poelzl, Oliver Blank, Franz Hirler, Maximilian Roesch | 2021-01-26 |
| 10872957 | Semiconductor device with needle-shaped field plate structures | Ralf Siemieniec, Oliver Blank, Franz Hirler, Michael Hutzler, David Laforet +1 more | 2020-12-22 |
| 10868173 | Semiconductor device having an edge termination area with trench electrodes at different electric potentials, and method for manufacturing thereof | Cedric Ouvrard, Adam Amali, Oliver Blank, Michael Hutzler, David Laforet +2 more | 2020-12-15 |
| 10727331 | Semiconductor device having a reduced surface doping in an edge termination area, and method for manufacturing thereof | Cedric Ouvrard, Adam Amali, Oliver Blank, Michael Hutzler, David Laforet +2 more | 2020-07-28 |
| 10629595 | Power semiconductor device having different gate crossings, and method for manufacturing thereof | Cedric Ouvrard, Cesar Augusto Braz, Olivier Guillemant, David Laforet, Gerhard Noebauer | 2020-04-21 |
| 10573731 | Semiconductor transistor and method for forming the semiconductor transistor | Cesar Augusto Braz, Olivier Guillemant, David Laforet, Cedric Ouvrard | 2020-02-25 |
| 10510846 | Semiconductor device with needle-shaped field plate structures in a transistor cell region and in an inner termination region | Ralf Siemieniec, Oliver Blank, Franz Hirler, Michael Hutzler, David Laforet +1 more | 2019-12-17 |
| 10453929 | Methods of manufacturing a power MOSFET | David Laforet, Oliver Blank, Michael Hutzler, Cedric Ouvrard, Ralf Siemieniec | 2019-10-22 |
| 10453931 | Semiconductor device having termination trench | Oliver Blank, Franz Hirler, Ralf Siemieniec | 2019-10-22 |
| 10276670 | Semiconductor devices and methods for forming semiconductor devices | Ralf Siemieniec | 2019-04-30 |
| 10205015 | Reduced gate charge field-effect transistor | David Laforet, Cedric Ouvrard | 2019-02-12 |
| 10199456 | Method of manufacturing a semiconductor device having a charge compensation region underneath a gate trench | Minghao Jin, Oliver Blank, Martin Vielemeyer, Franz Hirler | 2019-02-05 |
| 10177250 | Method of manufacturing a semiconductor device with a metal-filled groove in a polysilicon gate electrode | Ralf Siemieniec, Oliver Blank | 2019-01-08 |
| 10164025 | Semiconductor device having termination trench | Oliver Blank, Franz Hirler, Ralf Siemieniec | 2018-12-25 |
| 10050113 | Semiconductor device with needle-shaped field plates and a gate structure with edge and node portions | Ralf Siemieniec, Oliver Blank, David Laforet, Cedric Ouvrard | 2018-08-14 |
| 9899488 | Semiconductor device having a trench with different electrode materials | Martin Vielemeyer | 2018-02-20 |
| 9799738 | Semiconductor device with field electrode and contact structure | Ralf Siemieniec, Oliver Blank, Michael Hutzler, David Laforet, Cedric Ouvrard | 2017-10-24 |
| 9768290 | Semiconductor device with metal-filled groove in polysilicon gate electrode | Ralf Siemieniec, Oliver Blank | 2017-09-19 |
| 9755066 | Reduced gate charge field-effect transistor | David Laforet, Cedric Ouvrard | 2017-09-05 |