MP

Martin Poelzl

IA Infineon Technologies Austria Ag: 66 patents #11 of 1,126Top 1%
Infineon Technologies Ag: 27 patents #247 of 7,486Top 4%
📍 Ossiach, AT: #1 of 8 inventorsTop 15%
Overall (All Time): #17,188 of 4,157,543Top 1%
92
Patents All Time

Issued Patents All Time

Showing 1–25 of 92 patents

Patent #TitleCo-InventorsDate
12119400 Semiconductor transistor device and method of manufacturing the same Robert Haase, Jyotshna Bhandari, Heimo Hofer, Ling Ma, Ashita Mirchandani +3 more 2024-10-15
12087717 Semiconductor package and methods of manufacturing a semiconductor package Thomas Feil, Danny Clavette, Paul Ganitzer, Carsten von Koblinski 2024-09-10
12080789 Semiconductor die and method of manufacturing the same Oliver Blank, Heimo Hofer, Andreas Kleinbichler 2024-09-03
11848237 Composite wafer, semiconductor device and electronic component Paul Ganitzer, Carsten von Koblinski, Thomas Feil, Gerald Lackner, Jochen Mueller +1 more 2023-12-19
11699725 Semiconductor device having an alignment layer with mask pits Oliver Blank, Franz Hirler, Maximilian Roesch, Li Juin Yip 2023-07-11
11552016 Semiconductor device with metallization structure on opposite sides of a semiconductor portion Paul Ganitzer 2023-01-10
11545545 Superjunction device with oxygen inserted Si-layers Robert Haase, Sylvain Leomant, Maximilian Roesch, Ravi Keshav Joshi, Andreas Meiser +2 more 2023-01-03
11316043 Semiconductor transistor device and method of manufacturing the same Robert Haase, Jyotshna Bhandari, Heimo Hofer, Ling Ma, Ashita Mirchandani +3 more 2022-04-26
11302579 Composite wafer, semiconductor device and electronic component Paul Ganitzer, Carsten von Koblinski, Thomas Feil, Gerald Lackner, Jochen Mueller +1 more 2022-04-12
11081457 Semiconductor package and methods of manufacturing a semiconductor package Thomas Feil, Danny Clavette, Paul Ganitzer, Carsten von Koblinski 2021-08-03
11031478 Semiconductor device having body contacts with dielectric spacers and corresponding methods of manufacture Wei Huang, Thomas Feil, Maximilian Roesch 2021-06-08
11031466 Method of forming oxygen inserted Si-layers in power semiconductor devices Robert Haase, Maximilian Roesch, Sylvain Leomant, Andreas Meiser, Bernhard Goller +1 more 2021-06-08
10991812 Transistor device with a rectifier element between a field electrode and a source electrode Ralf Siemieniec, Robert Haase, Gerhard Noebauer 2021-04-27
10971449 Semiconductor device with metallization structure on opposite sides of a semiconductor portion Paul Ganitzer 2021-04-06
10903321 Semiconductor device and method of manufacturing a semiconductor device using an alignment layer Oliver Blank, Franz Hirler, Maximilian Roesch, Li Juin Yip 2021-01-26
10868172 Vertical power devices with oxygen inserted Si-layers Oliver Blank, Thomas Feil, Maximilian Roesch, Robert Haase, Sylvain Leomant +2 more 2020-12-15
10861966 Vertical trench power devices with oxygen inserted Si-layers Thomas Feil, Robert Haase, Maximilian Roesch, Sylvain Leomant, Bernhard Goller +1 more 2020-12-08
10790353 Semiconductor device with superjunction and oxygen inserted Si-layers Robert Haase, Sylvain Leomant, Maximilian Roesch, Ravi Keshav Joshi, Andreas Meiser +2 more 2020-09-29
10741638 Oxygen inserted Si-layers for reduced substrate dopant outdiffusion in power devices Robert Haase, Maximilian Roesch, Sylvain Leomant, Andreas Meiser, Bernhard Goller +1 more 2020-08-11
10672664 Composite wafer, semiconductor device, electronic component and method of manufacturing a semiconductor device Paul Ganitzer, Carsten von Koblinski, Thomas Feil, Gerald Lackner, Jochen Mueller +1 more 2020-06-02
10593623 Semiconductor device with metallization structure on opposite sides of a semiconductor portion Paul Ganitzer 2020-03-17
10580888 Oxygen inserted Si-layers for reduced contact implant outdiffusion in vertical power devices Oliver Blank, Thomas Feil, Maximilian Roesch, Robert Haase, Sylvain Leomant +2 more 2020-03-03
10573742 Oxygen inserted Si-layers in vertical trench power devices Thomas Feil, Robert Haase, Maximilian Roesch, Sylvain Leomant, Bernhard Goller +1 more 2020-02-25
10510836 Gate trench device with oxygen inserted si-layers Robert Haase, Maximilian Roesch, Sylvain Leomant, Andreas Meiser 2019-12-17
10355087 Semiconductor device including a transistor with a gate dielectric having a variable thickness Martin Vielemeyer, Andreas Meiser, Till Schloesser, Franz Hirler 2019-07-16