Issued Patents All Time
Showing 1–25 of 39 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 12315835 | Pre-packaged chip, method of manufacturing a pre-packaged chip, semiconductor package and method of manufacturing a semiconductor package | Petteri Palm, Eslam Abdelhamid, Thomas Gebhard, Mahadi-Ul HASSAN, Juan Sanchez | 2025-05-27 |
| 12119400 | Semiconductor transistor device and method of manufacturing the same | Robert Haase, Jyotshna Bhandari, Heimo Hofer, Ling Ma, Ashita Mirchandani +3 more | 2024-10-15 |
| 11316043 | Semiconductor transistor device and method of manufacturing the same | Robert Haase, Jyotshna Bhandari, Heimo Hofer, Ling Ma, Ashita Mirchandani +3 more | 2022-04-26 |
| 11133391 | Transistor device | Franz Hirler, Cesar Augusto Braz, Gerhard Noebauer | 2021-09-28 |
| 10439030 | Semiconductor device having a channel region patterned into a ridge by adjacent gate trenches | Andreas Meiser, Rolf Weis, Franz Hirler, Markus Zundel, Peter Irsigler | 2019-10-08 |
| 10438945 | Method of manufacturing a semiconductor die | Walter Rieger, Martin Pölzl, Gerhard Nöbauer | 2019-10-08 |
| 10355087 | Semiconductor device including a transistor with a gate dielectric having a variable thickness | Andreas Meiser, Till Schloesser, Franz Hirler, Martin Poelzl | 2019-07-16 |
| 10263086 | Semiconductor device with first and second field electrode structures | Franz Hirler | 2019-04-16 |
| 10236352 | Method for manufacturing a semiconductor device | Robert Haase | 2019-03-19 |
| 10199456 | Method of manufacturing a semiconductor device having a charge compensation region underneath a gate trench | Minghao Jin, Li Juin Yip, Oliver Blank, Franz Hirler | 2019-02-05 |
| 9978862 | Power transistor with at least partially integrated driver stage | Walter Rieger, Martin Pölzl, Gerhard Nöbauer | 2018-05-22 |
| 9917160 | Semiconductor device having a polycrystalline silicon IGFET | Andrew Christopher Graeme Wood, Oliver Blank, Martin Poelzl | 2018-03-13 |
| 9899488 | Semiconductor device having a trench with different electrode materials | Li Juin Yip | 2018-02-20 |
| 9842901 | Semiconductor device with first and second field electrode structures | Franz Hirler | 2017-12-12 |
| 9812535 | Method for manufacturing a semiconductor device and power semiconductor device | Robert Haase | 2017-11-07 |
| 9799729 | Method of manufacturing a semiconductor device with field electrode structures, gate structures and auxiliary diode structures | Ralf Siemieniec, Oliver Blank, Franz Hirler | 2017-10-24 |
| 9799643 | Gate voltage control for III-nitride transistors | Walter Rieger, Martin PöIzl, Gerhard Nöbauer | 2017-10-24 |
| 9735243 | Semiconductor device, integrated circuit and method of forming a semiconductor device | Andreas Meiser, Rolf Weis, Franz Hirler, Markus Zundel, Peter Irsigler | 2017-08-15 |
| 9735141 | Compound semiconductor transistor with gate overvoltage protection | Michael Hutzler, Gilberto Curatola, Gianmauro Pozzovivo | 2017-08-15 |
| 9590062 | Insulating block in a semiconductor trench | Li Juin Yip | 2017-03-07 |
| 9543386 | Semiconductor device with field electrode structures, gate structures and auxiliary diode structures | Ralf Siemieniec, Oliver Blank, Franz Hirler | 2017-01-10 |
| 9530773 | Systems and methods for integrating bootstrap circuit elements in power transistors and other devices | Sylvain Leomant, Milko Paolucci, Martin Poelzl | 2016-12-27 |
| 9525044 | Method of manufacturing a spacer supported lateral channel FET | — | 2016-12-20 |
| 9502401 | Integrated circuit with first and second switching devices, half bridge circuit and method of manufacturing | Sylvain Leomant | 2016-11-22 |
| 9443973 | Semiconductor device with charge compensation region underneath gate trench | Minghao Jin, Li Juin Yip, Oliver Blank, Franz Hirler | 2016-09-13 |