Issued Patents All Time
Showing 1–22 of 22 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 12159933 | Semiconductor device with semiconductor mesas between adjacent gate trenches | Anita Brazzale, Robert Haase, Harsh Naik | 2024-12-03 |
| 11908904 | Planar gate semiconductor device with oxygen-doped Si-layers | Thomas Feil, Yulia Polak, Maximilian Roesch | 2024-02-20 |
| 11777026 | Power semiconductor device having low-k dielectric gaps between adjacent metal contacts | Anita Brazzale, Robert Haase, Harsh Naik | 2023-10-03 |
| 11682704 | Method of producing a semiconductor device | Georg Ehrentraut, Maximilian Roesch | 2023-06-20 |
| 11581369 | Semiconductor switch element and method of manufacturing the same | Gerhard Noebauer, Thomas Oszinda, Christian Gruber, Sergey Ananiev | 2023-02-14 |
| 11545545 | Superjunction device with oxygen inserted Si-layers | Martin Poelzl, Robert Haase, Maximilian Roesch, Ravi Keshav Joshi, Andreas Meiser +2 more | 2023-01-03 |
| 11316020 | Semiconductor device and method | Georg Ehrentraut, Maximilian Roesch | 2022-04-26 |
| 11031466 | Method of forming oxygen inserted Si-layers in power semiconductor devices | Martin Poelzl, Robert Haase, Maximilian Roesch, Andreas Meiser, Bernhard Goller +1 more | 2021-06-08 |
| 11031479 | Semiconductor device with different gate trenches | Britta Wutte | 2021-06-08 |
| 10868172 | Vertical power devices with oxygen inserted Si-layers | Oliver Blank, Thomas Feil, Maximilian Roesch, Martin Poelzl, Robert Haase +2 more | 2020-12-15 |
| 10861966 | Vertical trench power devices with oxygen inserted Si-layers | Thomas Feil, Robert Haase, Martin Poelzl, Maximilian Roesch, Bernhard Goller +1 more | 2020-12-08 |
| 10790353 | Semiconductor device with superjunction and oxygen inserted Si-layers | Martin Poelzl, Robert Haase, Maximilian Roesch, Ravi Keshav Joshi, Andreas Meiser +2 more | 2020-09-29 |
| 10741638 | Oxygen inserted Si-layers for reduced substrate dopant outdiffusion in power devices | Martin Poelzl, Robert Haase, Maximilian Roesch, Andreas Meiser, Bernhard Goller +1 more | 2020-08-11 |
| 10580888 | Oxygen inserted Si-layers for reduced contact implant outdiffusion in vertical power devices | Oliver Blank, Thomas Feil, Maximilian Roesch, Martin Poelzl, Robert Haase +2 more | 2020-03-03 |
| 10573742 | Oxygen inserted Si-layers in vertical trench power devices | Thomas Feil, Robert Haase, Martin Poelzl, Maximilian Roesch, Bernhard Goller +1 more | 2020-02-25 |
| 10510836 | Gate trench device with oxygen inserted si-layers | Robert Haase, Martin Poelzl, Maximilian Roesch, Andreas Meiser | 2019-12-17 |
| 10418452 | Semiconductor device with different gate trenches | Britta Wutte | 2019-09-17 |
| 9941354 | Semiconductor device comprising a first gate trench and a second gate trench | Britta Wutte | 2018-04-10 |
| 9530773 | Systems and methods for integrating bootstrap circuit elements in power transistors and other devices | Martin Vielemeyer, Milko Paolucci, Martin Poelzl | 2016-12-27 |
| 9502401 | Integrated circuit with first and second switching devices, half bridge circuit and method of manufacturing | Martin Vielemeyer | 2016-11-22 |
| 9171738 | Systems and methods for integrating bootstrap circuit elements in power transistors and other devices | Martin Vielemeyer, Milko Paolucci, Martin Poelzl | 2015-10-27 |
| 8004924 | Voltage regulator for memory | Jimmy Fort, Arnaud Turier, Laurent Vachez, Lotfi Ben Ammar | 2011-08-23 |