Issued Patents All Time
Showing 1–25 of 34 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 11908904 | Planar gate semiconductor device with oxygen-doped Si-layers | Sylvain Leomant, Thomas Feil, Yulia Polak | 2024-02-20 |
| 11699725 | Semiconductor device having an alignment layer with mask pits | Martin Poelzl, Oliver Blank, Franz Hirler, Li Juin Yip | 2023-07-11 |
| 11682704 | Method of producing a semiconductor device | Sylvain Leomant, Georg Ehrentraut | 2023-06-20 |
| 11545545 | Superjunction device with oxygen inserted Si-layers | Martin Poelzl, Robert Haase, Sylvain Leomant, Ravi Keshav Joshi, Andreas Meiser +2 more | 2023-01-03 |
| 11316020 | Semiconductor device and method | Sylvain Leomant, Georg Ehrentraut | 2022-04-26 |
| 11031478 | Semiconductor device having body contacts with dielectric spacers and corresponding methods of manufacture | Wei Huang, Martin Poelzl, Thomas Feil | 2021-06-08 |
| 11031466 | Method of forming oxygen inserted Si-layers in power semiconductor devices | Martin Poelzl, Robert Haase, Sylvain Leomant, Andreas Meiser, Bernhard Goller +1 more | 2021-06-08 |
| 10903321 | Semiconductor device and method of manufacturing a semiconductor device using an alignment layer | Martin Poelzl, Oliver Blank, Franz Hirler, Li Juin Yip | 2021-01-26 |
| 10868172 | Vertical power devices with oxygen inserted Si-layers | Oliver Blank, Thomas Feil, Martin Poelzl, Robert Haase, Sylvain Leomant +2 more | 2020-12-15 |
| 10861966 | Vertical trench power devices with oxygen inserted Si-layers | Thomas Feil, Robert Haase, Martin Poelzl, Sylvain Leomant, Bernhard Goller +1 more | 2020-12-08 |
| 10790353 | Semiconductor device with superjunction and oxygen inserted Si-layers | Martin Poelzl, Robert Haase, Sylvain Leomant, Ravi Keshav Joshi, Andreas Meiser +2 more | 2020-09-29 |
| 10741638 | Oxygen inserted Si-layers for reduced substrate dopant outdiffusion in power devices | Martin Poelzl, Robert Haase, Sylvain Leomant, Andreas Meiser, Bernhard Goller +1 more | 2020-08-11 |
| 10580888 | Oxygen inserted Si-layers for reduced contact implant outdiffusion in vertical power devices | Oliver Blank, Thomas Feil, Martin Poelzl, Robert Haase, Sylvain Leomant +2 more | 2020-03-03 |
| 10573742 | Oxygen inserted Si-layers in vertical trench power devices | Thomas Feil, Robert Haase, Martin Poelzl, Sylvain Leomant, Bernhard Goller +1 more | 2020-02-25 |
| 10529845 | Semiconductor device | Ashita Mirchandani, Thomas Feil, Britta Wutte | 2020-01-07 |
| 10510836 | Gate trench device with oxygen inserted si-layers | Robert Haase, Martin Poelzl, Sylvain Leomant, Andreas Meiser | 2019-12-17 |
| 10249723 | Semiconductor device | Heimo Hofer, Martin Poelzl, Britta Wutte | 2019-04-02 |
| 10181511 | Semiconductor device and method of manufacturing a semiconductor device | Martin Poelzl, Georg Ehrentraut, Franz Hirler | 2019-01-15 |
| 10068848 | Semiconductor chip with integrated series resistances | Gerhard Noebauer, Ralf Siemieniec, Martin Poelzl, Michael Hutzler | 2018-09-04 |
| 9859385 | Processing a semiconductor device | Heimo Hofer, Martin Poelzl, Britta Wutte | 2018-01-02 |
| 9627520 | MOS transistor having a cell array edge zone arranged partially below and having an interface with a trench in an edge region of the cell array | Franz Hirler, Ralf Siemieniec, Christian Geissler, Oliver Blank | 2017-04-18 |
| 9614044 | Semiconductor device with current sensor | Michael Hutzler | 2017-04-04 |
| 9570553 | Semiconductor chip with integrated series resistances | Gerhard Noebauer, Ralf Siemieniec, Martin Poelzl, Michael Hutzler | 2017-02-14 |
| 9543398 | Semiconductor switching device including charge storage structure | Johannes Georg Laven, Anton Mauder, Matteo Dainese, Franz Hirler, Christian Jaeger +3 more | 2017-01-10 |
| 9484410 | Lateral MOS power transistor having front side drain electrode and back side source electrode | Oliver Haeberlen, Franz Hirler | 2016-11-01 |