Issued Patents All Time
Showing 25 most recent of 300 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 12426350 | Semiconductor device with diode chain connected to gate metallization | Joachim Weyers, Ralf Siemieniec, Guang Zeng | 2025-09-23 |
| 12382677 | Power semiconductor device having nanometer-scale structure | Franz-Josef Niedernostheide, Christian Philipp Sandow | 2025-08-05 |
| 12300724 | Method of manufacturing silicon carbide semiconductor devices | Andreas Meiser, Caspar Leendertz, Roland Rupp | 2025-05-13 |
| 12266718 | Voltage-controlled switching device with channel region | Hans-Juergen Thees, Alim Karmous | 2025-04-01 |
| 12266680 | Voltage-controlled switching device with resistive path | Christian Philipp Sandow, Franz-Josef Niedernostheide | 2025-04-01 |
| 12218029 | Semiconductor device with improved performance in operation and improved flexibility in the arrangement of power chips | Edward Fuergut, Stephan Voss, Martin Gruber | 2025-02-04 |
| 12211945 | Power diode and method of manufacturing a power diode | Mario Barusic, Markus Beninger-Bina, Matteo Dainese | 2025-01-28 |
| 12132122 | Single chip power diode and method of producing a single chip power diode | Guang Zeng, Moritz Hauf | 2024-10-29 |
| 12003231 | Double gate transistor device and method of operating | Markus Bina, Jens Barrenscheen | 2024-06-04 |
| 11949006 | Power semiconductor device with p-contact and doped insulation blocks defining contact holes | Markus Beninger-Bina, Matteo Dainese, Ingo Dirnstorfer, Erich Griebl, Johannes Georg Laven +1 more | 2024-04-02 |
| 11848377 | Semiconductor component with edge termination region | Hans-Joachim Schulze, Matteo Dainese, Elmar Falck, Franz-Josef Niedernostheide, Manfred Pfaffenlehner | 2023-12-19 |
| 11837528 | Method of manufacturing a semiconductor device having a bond wire or clip bonded to a bonding pad | Hans-Joachim Schulze | 2023-12-05 |
| 11764296 | Method for manufacturing a semiconductor device | Johannes Georg Laven, Hans-Joachim Schulze, Werner Schustereder | 2023-09-19 |
| 11735633 | Silicon carbide device with trench gate structure and method of manufacturing | Ralf Siemieniec, Rudolf Elpelt | 2023-08-22 |
| 11728420 | Mesa contact for a power semiconductor device and method of producing a power semiconductor device | Hans-Juergen Thees | 2023-08-15 |
| 11721616 | Semiconductor package with signal distribution element | Stephan Voss, Edward Fuergut, Martin Gruber, Andreas Huerner | 2023-08-08 |
| 11695083 | Power diode and method of manufacturing a power diode | Mario Barusic, Markus Beninger-Bina, Matteo Dainese | 2023-07-04 |
| 11688732 | Short circuit protection structure in MOS-gated power devices | Guang Zeng, Joachim Weyers | 2023-06-27 |
| 11664464 | Diode and method of producing a diode | Guang Zeng, Moritz Hauf | 2023-05-30 |
| 11600701 | Semiconductor component having a SiC semiconductor body | Andreas Meiser, Caspar Leendertz | 2023-03-07 |
| 11552172 | Silicon carbide device with compensation layer and method of manufacturing | Caspar Leendertz, Romain Esteve, Moriz Jelinek, Hans-Joachim Schulze, Werner Schustereder | 2023-01-10 |
| 11469317 | RC IGBT | Frank Pfirsch, Erich Griebl, Viktoryia Lapidus, Christian Philipp Sandow, Antonio Vellei | 2022-10-11 |
| 11346880 | Power semiconductor device with integrated current measurement | Thomas Kimmer, Wolfgang Raberg, Mitja Rebec | 2022-05-31 |
| 11342187 | Method for producing a superjunction device | Hans Weber, Franz Hirler, Johannes Georg Laven, Hans-Joachim Schulze, Werner Schustereder +3 more | 2022-05-24 |
| 11302781 | Semiconductor device having an electrostatic discharge protection structure | Joachim Weyers, Stefan Gamerith, Franz Hirler | 2022-04-12 |