Issued Patents All Time
Showing 1–25 of 41 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 12300724 | Method of manufacturing silicon carbide semiconductor devices | Andreas Meiser, Anton Mauder, Roland Rupp | 2025-05-13 |
| 12283621 | Semiconductor device having a transistor with trenches and mesas | Markus Beninger-Bina, Matteo Dainese, Alice Pei-Shan Leendertz, Christian Philipp Sandow | 2025-04-22 |
| 12266694 | Silicon carbide device with a stripe-shaped trench gate structure | Thomas Basler, Paul Ellinghaus, Rudolf Elpelt, Michael Hell, Jens Peter Konrath +4 more | 2025-04-01 |
| 12176396 | Semiconductor device including current spread region | Michael Hell, Rudolf Elpelt, Thomas Ganner | 2024-12-24 |
| 12119377 | SiC devices with shielding structure | Michael Hell, Rudolf Elpelt | 2024-10-15 |
| 12057316 | Semiconductor device fabricated using channeling implant | Moriz Jelinek, Paul Ellinghaus, Axel Koenig, Hans-Joachim Schulze, Werner Schustereder | 2024-08-06 |
| 11929397 | Semiconductor device including trench structure and manufacturing method | Thomas Basler, Hans-Joachim Schulze | 2024-03-12 |
| 11908694 | Ion beam implantation method and semiconductor device | Moriz Jelinek, Michael Hell, Kristijan Luka MLETSCHNIG, Hans-Joachim Schulze | 2024-02-20 |
| 11888032 | Method of producing a silicon carbide device with a trench gate | Thomas Basler, Paul Ellinghaus, Rudolf Elpelt, Michael Hell, Jens Peter Konrath +4 more | 2024-01-30 |
| 11764063 | Silicon carbide device with compensation region and method of manufacturing | Hans-Joachim Schulze, Romain Esteve, Moriz Jelinek, Werner Schustereder | 2023-09-19 |
| 11757031 | Power transistor with integrated Schottky diode | Michael Hell, Rudolf Elpelt | 2023-09-12 |
| 11626477 | Silicon carbide field-effect transistor including shielding areas | Ralf Siemieniec, Thomas Aichinger, Thomas Basler, Wolfgang Bergner, Rudolf Elpelt +5 more | 2023-04-11 |
| 11610976 | Semiconductor device including a transistor with one or more barrier regions | Markus Beninger-Bina, Matteo Dainese, Alice Pei-Shan Leendertz, Christian Philipp Sandow | 2023-03-21 |
| 11610986 | Power semiconductor switch having a cross-trench structure | Matteo Dainese, Alexander Philippou, Markus Beninger-Bina, Ingo Dirnstorfer, Erich Griebl +3 more | 2023-03-21 |
| 11600701 | Semiconductor component having a SiC semiconductor body | Andreas Meiser, Anton Mauder | 2023-03-07 |
| 11581428 | IGBT with dV/dt controllability | Alexander Philippou, Markus Beninger-Bina, Matteo Dainese, Christian Jaeger, Johannes Georg Laven +3 more | 2023-02-14 |
| 11552173 | Silicon carbide device with trench gate | Thomas Basler, Paul Ellinghaus, Rudolf Elpelt, Michael Hell, Jens Peter Konrath +4 more | 2023-01-10 |
| 11552172 | Silicon carbide device with compensation layer and method of manufacturing | Romain Esteve, Moriz Jelinek, Anton Mauder, Hans-Joachim Schulze, Werner Schustereder | 2023-01-10 |
| 11552170 | Semiconductor device including current spread region | Michael Hell, Rudolf Elpelt, Thomas Ganner | 2023-01-10 |
| 11462611 | SiC device with channel regions extending along at least one of the (1-100) plane and the (-1100) plane and methods of manufacturing thereof | Thomas Aichinger, Wolfgang Bergner, Paul Ellinghaus, Rudolf Elpelt, Romain Esteve +5 more | 2022-10-04 |
| 11404370 | Failure structure in semiconductor device | Thomas Basler, Andreas Huerner, Dethard Peters | 2022-08-02 |
| 11380756 | Silicon carbide device with Schottky contact | Rudolf Elpelt, Romain Esteve, Thomas Ganner, Jens Peter Konrath, Larissa Wehrhahn-Kilian | 2022-07-05 |
| 11367775 | Shielding structure for SiC devices | Michael Hell, Rudolf Elpelt | 2022-06-21 |
| 11322596 | Semiconductor device including junction material in a trench and manufacturing method | Jens Peter Konrath, Larissa Wehrhahn-Kilian | 2022-05-03 |
| 11276754 | Semiconductor device including trench structure and manufacturing method | Thomas Basler, Hans-Joachim Schulze | 2022-03-15 |