Issued Patents All Time
Showing 25 most recent of 49 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 11901407 | Semiconductor device with improved junction termination extension region | Tim Böttcher | 2024-02-13 |
| 11881512 | Method of manufacturing semiconductor device with silicon carbide body | Ralf Siemieniec, Thomas Aichinger, Ravi Keshav Joshi, Shiqin Niu | 2024-01-23 |
| 11842938 | Semiconductor device and method for forming a semiconductor device | Jens Peter Konrath, Wolfgang Bergner, Richard Gaisberger, Florian Grasse, Jochen Hilsenbeck +7 more | 2023-12-12 |
| 11764063 | Silicon carbide device with compensation region and method of manufacturing | Hans-Joachim Schulze, Moriz Jelinek, Caspar Leendertz, Werner Schustereder | 2023-09-19 |
| 11626477 | Silicon carbide field-effect transistor including shielding areas | Ralf Siemieniec, Thomas Aichinger, Thomas Basler, Wolfgang Bergner, Rudolf Elpelt +5 more | 2023-04-11 |
| 11552172 | Silicon carbide device with compensation layer and method of manufacturing | Caspar Leendertz, Moriz Jelinek, Anton Mauder, Hans-Joachim Schulze, Werner Schustereder | 2023-01-10 |
| 11462611 | SiC device with channel regions extending along at least one of the (1-100) plane and the (-1100) plane and methods of manufacturing thereof | Thomas Aichinger, Wolfgang Bergner, Paul Ellinghaus, Rudolf Elpelt, Florian Grasse +5 more | 2022-10-04 |
| 11380756 | Silicon carbide device with Schottky contact | Caspar Leendertz, Rudolf Elpelt, Thomas Ganner, Jens Peter Konrath, Larissa Wehrhahn-Kilian | 2022-07-05 |
| 11217500 | Semiconductor device and method for forming a semiconductor device | Jens Peter Konrath, Wolfgang Bergner, Richard Gaisberger, Florian Grasse, Jochen Hilsenbeck +7 more | 2022-01-04 |
| 11195946 | Method of manufacturing a silicon carbide semiconductor device with trench gate structure and vertical pn junction between body region and drift structure | Andreas Meiser, Roland Rupp | 2021-12-07 |
| 11195921 | Semiconductor device with silicon carbide body | Ralf Siemieniec, Thomas Aichinger, Ravi Keshav Joshi, Shiqin Niu | 2021-12-07 |
| 11101343 | Silicon carbide field-effect transistor including shielding areas | Ralf Siemieniec, Thomas Aichinger, Thomas Basler, Wolfgang Bergner, Rudolf Elpelt +5 more | 2021-08-24 |
| 10985248 | SiC power semiconductor device with integrated Schottky junction | Caspar Leendertz, Anton Mauder, Andreas Meiser, Bernd Zippelius | 2021-04-20 |
| 10964808 | Silicon carbide semiconductor device with trench gate structure and vertical PN junction between body region and drift structure | Andreas Meiser, Roland Rupp | 2021-03-30 |
| 10915029 | Particle irradiation apparatus, beam modifier device, and semiconductor device including a junction termination extension zone | Roland Rupp, Rudolf Elpelt | 2021-02-09 |
| 10896952 | SiC device and methods of manufacturing thereof | Thomas Aichinger, Wolfgang Bergner, Paul Ellinghaus, Rudolf Elpelt, Florian Grasse +5 more | 2021-01-19 |
| 10734514 | Semiconductor device with trench gate structure including a gate electrode and a contact structure for a diode region | Thomas Aichinger, Dethard Peters, Roland Rupp, Ralf Siemieniec | 2020-08-04 |
| 10727330 | Semiconductor device with diode region | Ralf Siemieniec, Wolfgang Bergner, Dethard Peters | 2020-07-28 |
| 10700182 | Semiconductor device with transistor cells and a drift structure and method of manufacturing | Thomas Aichinger, Wolfgang Bergner, Daniel Kueck, Dethard Peters, Ralf Siemieniec +1 more | 2020-06-30 |
| 10700192 | Semiconductor device having a source electrode contact trench | Ralf Siemieniec, Wolfgang Bergner, Dethard Peters | 2020-06-30 |
| 10679983 | Method of producing a semiconductor device | Ralf Siemieniec, Dethard Peters | 2020-06-09 |
| 10586845 | SiC trench transistor device and methods of manufacturing thereof | Thomas Aichinger, Wolfgang Bergner, Paul Ellinghaus, Rudolf Elpelt, Florian Grasse +5 more | 2020-03-10 |
| 10580878 | SiC device with buried doped region | Ravi Keshav Joshi, Rudolf Elpelt | 2020-03-03 |
| 10553685 | SiC semiconductor device with offset in trench bottom | Ralf Siemieniec, Thomas Aichinger, Daniel Kueck | 2020-02-04 |
| 10361192 | Semiconductor devices with trench gate structures in a semiconductor body with hexagonal crystal lattice | Roland Rupp, Dethard Peters | 2019-07-23 |