Issued Patents All Time
Showing 26–49 of 49 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 10332876 | Method of forming compound semiconductor body | Ralf Siemieniec, Daniel Kueck, Gilberto Curatola | 2019-06-25 |
| 10256097 | Forming a metal contact layer on silicon carbide and semiconductor device with metal contact structure | Ravi Keshav Joshi, Roland Rupp, Francisco Javier Santos Rodriguez, Gerald Unegg | 2019-04-09 |
| 10217636 | Method of manufacturing a silicon carbide semiconductor device by removing amorphized portions | Thomas Aichinger, Victorina Poenariu, Wolfgang Bergner, Daniel Kueck, Dethard Peters +3 more | 2019-02-26 |
| 10211306 | Semiconductor device with diode region and trench gate structure | Ralf Siemieniec, Dethard Peters, Wolfgang Bergner, Thomas Aichinger, Daniel Kueck +4 more | 2019-02-19 |
| 10120287 | Particle irradiation apparatus, beam modifier device, and semiconductor device including a junction termination extension zone | Roland Rupp, Rudolf Elpelt | 2018-11-06 |
| 10074741 | Semiconductor device with trench gate structure including a gate electrode and a contact structure for a diode region | Thomas Aichinger, Dethard Peters, Roland Rupp, Ralf Siemieniec | 2018-09-11 |
| 10049879 | Self aligned silicon carbide contact formation using protective layer | Ravi Keshav Joshi, Markus Kahn, Kurt Pekoll, Juergen Steinbrenner, Gerald Unegg | 2018-08-14 |
| 10038087 | Semiconductor device and transistor cell having a diode region | Ralf Siemieniec, Wolfgang Bergner, Dethard Peters | 2018-07-31 |
| 9997515 | Semiconductor devices with trench gate structures in a semiconductor body with hexagonal crystal lattice | Roland Rupp, Dethard Peters | 2018-06-12 |
| 9960230 | Silicon-carbide transistor device with a shielded gate | Dethard Peters, Wolfgang Bergner, Ralf Siemieniec, Thomas Aichinger, Daniel Kueck | 2018-05-01 |
| 9941272 | Method of producing a semiconductor device | Ralf Siemieniec, Dethard Peters | 2018-04-10 |
| 9934972 | Method of manufacturing a silicon carbide semiconductor device by removing amorphized portions | Thomas Aichinger, Wolfgang Bergner, Daniel Kueck, Dethard Peters, Victorina Poenariu +3 more | 2018-04-03 |
| 9917170 | Carbon based contact structure for silicon carbide device technical field | Ravi Keshav Joshi, Markus Kahn, Gerald Unegg | 2018-03-13 |
| 9876103 | Semiconductor device and transistor cell having a diode region | Ralf Siemieniec, Wolfgang Bergner, Dethard Peters | 2018-01-23 |
| 9837527 | Semiconductor device with a trench electrode | Ralf Siemieniec, Wolfgang Bergner, Dethard Peters | 2017-12-05 |
| 9818818 | Power semiconductor device including trench gate structures with longitudinal axes tilted to a main crystal direction | Roland Rupp, Dethard Peters | 2017-11-14 |
| 9741712 | Semiconductor devices with trench gate structures in a semiconductor body with hexagonal crystal lattice | Roland Rupp, Dethard Peters | 2017-08-22 |
| 9666482 | Self aligned silicon carbide contact formation using protective layer | Ravi Keshav Joshi, Markus Kahn, Kurt Pekoll, Juergen Steinbrenner, Gerald Unegg | 2017-05-30 |
| 9666696 | Method of manufacturing a vertical junction field effect transistor | Cedric Ouvrard | 2017-05-30 |
| 9577073 | Method of forming a silicon-carbide device with a shielded gate | Dethard Peters, Wolfgang Bergner, Ralf Siemieniec, Thomas Aichinger, Daniel Kueck | 2017-02-21 |
| 9478655 | Semiconductor device having a lower diode region arranged below a trench | Ralf Siemieniec, Wolfgang Bergner, Dethard Peters | 2016-10-25 |
| 9293558 | Semiconductor device | Ralf Siemieniec, Dethard Peters | 2016-03-22 |
| 9209318 | Vertical JFET with body diode and device regions disposed in a single compound epitaxial layer | Cedric Ouvrard | 2015-12-08 |
| 9029974 | Semiconductor device, junction field effect transistor and vertical field effect transistor | Jens Peter Konrath, Daniel Kueck, David Laforet, Cedric Ouvrard, Roland Rupp +2 more | 2015-05-12 |