Issued Patents All Time
Showing 25 most recent of 39 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 12266694 | Silicon carbide device with a stripe-shaped trench gate structure | Caspar Leendertz, Thomas Basler, Paul Ellinghaus, Michael Hell, Jens Peter Konrath +4 more | 2025-04-01 |
| 12176396 | Semiconductor device including current spread region | Michael Hell, Thomas Ganner, Caspar Leendertz | 2024-12-24 |
| 12119377 | SiC devices with shielding structure | Michael Hell, Caspar Leendertz | 2024-10-15 |
| 11888032 | Method of producing a silicon carbide device with a trench gate | Caspar Leendertz, Thomas Basler, Paul Ellinghaus, Michael Hell, Jens Peter Konrath +4 more | 2024-01-30 |
| 11757031 | Power transistor with integrated Schottky diode | Michael Hell, Caspar Leendertz | 2023-09-12 |
| 11735633 | Silicon carbide device with trench gate structure and method of manufacturing | Ralf Siemieniec, Anton Mauder | 2023-08-22 |
| 11626477 | Silicon carbide field-effect transistor including shielding areas | Ralf Siemieniec, Thomas Aichinger, Thomas Basler, Wolfgang Bergner, Romain Esteve +5 more | 2023-04-11 |
| 11552173 | Silicon carbide device with trench gate | Caspar Leendertz, Thomas Basler, Paul Ellinghaus, Michael Hell, Jens Peter Konrath +4 more | 2023-01-10 |
| 11552170 | Semiconductor device including current spread region | Michael Hell, Thomas Ganner, Caspar Leendertz | 2023-01-10 |
| 11462611 | SiC device with channel regions extending along at least one of the (1-100) plane and the (-1100) plane and methods of manufacturing thereof | Thomas Aichinger, Wolfgang Bergner, Paul Ellinghaus, Romain Esteve, Florian Grasse +5 more | 2022-10-04 |
| 11437470 | Silicon carbide semiconductor component | Thomas Basler, Hans-Joachim Schulze | 2022-09-06 |
| 11380756 | Silicon carbide device with Schottky contact | Caspar Leendertz, Romain Esteve, Thomas Ganner, Jens Peter Konrath, Larissa Wehrhahn-Kilian | 2022-07-05 |
| 11367775 | Shielding structure for SiC devices | Michael Hell, Caspar Leendertz | 2022-06-21 |
| 11145755 | Silicon carbide semiconductor component with edge termination structure | Larissa Wehrhahn-Kilian, Roland Rupp, Ralf Siemieniec, Bernd Zippelius | 2021-10-12 |
| 11101343 | Silicon carbide field-effect transistor including shielding areas | Ralf Siemieniec, Thomas Aichinger, Thomas Basler, Wolfgang Bergner, Romain Esteve +5 more | 2021-08-24 |
| 10957768 | Silicon carbide device with an implantation tail compensation region | Michael Hell, Caspar Leendertz, Dethard Peters | 2021-03-23 |
| 10915029 | Particle irradiation apparatus, beam modifier device, and semiconductor device including a junction termination extension zone | Roland Rupp, Romain Esteve | 2021-02-09 |
| 10896952 | SiC device and methods of manufacturing thereof | Thomas Aichinger, Wolfgang Bergner, Paul Ellinghaus, Romain Esteve, Florian Grasse +5 more | 2021-01-19 |
| 10861964 | Semiconductor device with junction termination zone | Roland Rupp, Reinhold Schoerner, Larissa Wehrhahn-Kilian, Bernd Zippelius | 2020-12-08 |
| 10615254 | Semiconductor device including a super junction structure in a SiC semiconductor body | Anton Mauder, Dethard Peters | 2020-04-07 |
| 10586845 | SiC trench transistor device and methods of manufacturing thereof | Thomas Aichinger, Wolfgang Bergner, Paul Ellinghaus, Romain Esteve, Florian Grasse +5 more | 2020-03-10 |
| 10580878 | SiC device with buried doped region | Ravi Keshav Joshi, Romain Esteve | 2020-03-03 |
| 10541325 | Semiconductor device with termination structure including field zones and method of manufacturing | Roland Rupp, Reinhold Schoerner, Larissa Wehrhahn-Kilian, Bernd Zippelius | 2020-01-21 |
| 10120287 | Particle irradiation apparatus, beam modifier device, and semiconductor device including a junction termination extension zone | Roland Rupp, Romain Esteve | 2018-11-06 |
| 10115791 | Semiconductor device including a super junction structure in a SiC semiconductor body | Anton Mauder, Dethard Peters | 2018-10-30 |