Issued Patents All Time
Showing 1–25 of 46 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 12324203 | Method for producing a silicon carbide semiconductor component | Thomas Ralf Siemieniec | 2025-06-03 |
| 11855147 | Method for producing a silicon carbide semiconductor component | Ralf Siemieniec | 2023-12-26 |
| 11842938 | Semiconductor device and method for forming a semiconductor device | Jens Peter Konrath, Romain Esteve, Richard Gaisberger, Florian Grasse, Jochen Hilsenbeck +7 more | 2023-12-12 |
| 11626477 | Silicon carbide field-effect transistor including shielding areas | Ralf Siemieniec, Thomas Aichinger, Thomas Basler, Rudolf Elpelt, Romain Esteve +5 more | 2023-04-11 |
| 11462611 | SiC device with channel regions extending along at least one of the (1-100) plane and the (-1100) plane and methods of manufacturing thereof | Thomas Aichinger, Paul Ellinghaus, Rudolf Elpelt, Romain Esteve, Florian Grasse +5 more | 2022-10-04 |
| 11417747 | Transistor device with a varying gate runner resistivity per area | Thomas Aichinger, Ralf Siemieniec, Frank Wolter | 2022-08-16 |
| 11282926 | Semiconductor device with a semiconductor body of silicon carbide | Hans-Joachim Schulze, Andre Rainer Stegner | 2022-03-22 |
| 11217500 | Semiconductor device and method for forming a semiconductor device | Jens Peter Konrath, Romain Esteve, Richard Gaisberger, Florian Grasse, Jochen Hilsenbeck +7 more | 2022-01-04 |
| 11133378 | Semiconductor device including trench contact structure and manufacturing method | Ralf Siemieniec | 2021-09-28 |
| 11101343 | Silicon carbide field-effect transistor including shielding areas | Ralf Siemieniec, Thomas Aichinger, Thomas Basler, Rudolf Elpelt, Romain Esteve +5 more | 2021-08-24 |
| 11063142 | Semiconductor device including silicon carbide body and method of manufacturing | Jens Peter Konrath, Christian Hecht, Hans-Joachim Schulze, Andre Rainer Stegner | 2021-07-13 |
| 11043560 | Silicon carbide semiconductor component comprising trench gate structures and shielding regions | Ralf Siemieniec | 2021-06-22 |
| 10896952 | SiC device and methods of manufacturing thereof | Thomas Aichinger, Paul Ellinghaus, Rudolf Elpelt, Romain Esteve, Florian Grasse +5 more | 2021-01-19 |
| 10886370 | Semiconductor device including silicon carbide body and method of manufacturing | Florian Grasse, Axel Sascha Baier, Barbara Englert, Christian Strenger | 2021-01-05 |
| 10818749 | Semiconductor devices and a circuit for controlling a field effect transistor of a semiconductor device | Anton Mauder, Jens Peter Konrath, Dethard Peters, Reinhold Schoerner | 2020-10-27 |
| 10727330 | Semiconductor device with diode region | Ralf Siemieniec, Romain Esteve, Dethard Peters | 2020-07-28 |
| 10700192 | Semiconductor device having a source electrode contact trench | Ralf Siemieniec, Romain Esteve, Dethard Peters | 2020-06-30 |
| 10700182 | Semiconductor device with transistor cells and a drift structure and method of manufacturing | Thomas Aichinger, Romain Esteve, Daniel Kueck, Dethard Peters, Ralf Siemieniec +1 more | 2020-06-30 |
| 10586845 | SiC trench transistor device and methods of manufacturing thereof | Thomas Aichinger, Paul Ellinghaus, Rudolf Elpelt, Romain Esteve, Florian Grasse +5 more | 2020-03-10 |
| 10217636 | Method of manufacturing a silicon carbide semiconductor device by removing amorphized portions | Thomas Aichinger, Victorina Poenariu, Romain Esteve, Daniel Kueck, Dethard Peters +3 more | 2019-02-26 |
| 10211306 | Semiconductor device with diode region and trench gate structure | Ralf Siemieniec, Dethard Peters, Romain Esteve, Thomas Aichinger, Daniel Kueck +4 more | 2019-02-19 |
| 10038087 | Semiconductor device and transistor cell having a diode region | Ralf Siemieniec, Romain Esteve, Dethard Peters | 2018-07-31 |
| 9960230 | Silicon-carbide transistor device with a shielded gate | Romain Esteve, Dethard Peters, Ralf Siemieniec, Thomas Aichinger, Daniel Kueck | 2018-05-01 |
| 9960243 | Semiconductor device with stripe-shaped trench gate structures and gate connector structure | Thomas Aichinger | 2018-05-01 |
| 9934972 | Method of manufacturing a silicon carbide semiconductor device by removing amorphized portions | Thomas Aichinger, Romain Esteve, Daniel Kueck, Dethard Peters, Victorina Poenariu +3 more | 2018-04-03 |