Issued Patents All Time
Showing 1–25 of 27 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 11848379 | MOSFET having a drift region with a graded doping profile and methods of manufacturing thereof | Ralf Siemieniec, David Laforet | 2023-12-19 |
| 11764272 | Semiconductor device and method of manufacturing the same | David Laforet, Cesar Augusto Braz, Alessandro Ferrara, Li Juin Yip | 2023-09-19 |
| 11462620 | Semiconductor device having a transistor cell region and a termination region with needle-shaped field plate structures | Ralf Siemieniec, Oliver Blank, Franz Hirler, Michael Hutzler, David Laforet +1 more | 2022-10-04 |
| 11296218 | Semiconductor device | Ralf Siemieniec, Adam Amali, Michael Hutzler, Laszlo Juhasz, David Laforet +1 more | 2022-04-05 |
| 11158735 | Charge compensation MOSFET with graded epi profile and methods of manufacturing thereof | Ralf Siemieniec, David Laforet | 2021-10-26 |
| 10879363 | Needle cell trench MOSFET | Oliver Blank, Marcel Mueller | 2020-12-29 |
| 10872957 | Semiconductor device with needle-shaped field plate structures | Ralf Siemieniec, Oliver Blank, Franz Hirler, Michael Hutzler, David Laforet +1 more | 2020-12-22 |
| 10868173 | Semiconductor device having an edge termination area with trench electrodes at different electric potentials, and method for manufacturing thereof | Adam Amali, Oliver Blank, Michael Hutzler, David Laforet, Harsh Naik +2 more | 2020-12-15 |
| 10811531 | Transistor device with gate resistor | David Laforet, Oliver Blank, Cesar Augusto Braz, Gerhard Noebauer | 2020-10-20 |
| 10727331 | Semiconductor device having a reduced surface doping in an edge termination area, and method for manufacturing thereof | Adam Amali, Oliver Blank, Michael Hutzler, David Laforet, Harsh Naik +2 more | 2020-07-28 |
| 10629595 | Power semiconductor device having different gate crossings, and method for manufacturing thereof | Cesar Augusto Braz, Olivier Guillemant, David Laforet, Gerhard Noebauer, Li Juin Yip | 2020-04-21 |
| 10573731 | Semiconductor transistor and method for forming the semiconductor transistor | Li Juin Yip, Cesar Augusto Braz, Olivier Guillemant, David Laforet | 2020-02-25 |
| 10510846 | Semiconductor device with needle-shaped field plate structures in a transistor cell region and in an inner termination region | Ralf Siemieniec, Oliver Blank, Franz Hirler, Michael Hutzler, David Laforet +1 more | 2019-12-17 |
| 10453929 | Methods of manufacturing a power MOSFET | David Laforet, Oliver Blank, Michael Hutzler, Ralf Siemieniec, Li Juin Yip | 2019-10-22 |
| 10269953 | Semiconductor device having a trench gate | David Laforet | 2019-04-23 |
| 10205015 | Reduced gate charge field-effect transistor | David Laforet, Li Juin Yip | 2019-02-12 |
| 10050113 | Semiconductor device with needle-shaped field plates and a gate structure with edge and node portions | Ralf Siemieniec, Oliver Blank, David Laforet, Li Juin Yip | 2018-08-14 |
| 9865726 | Method of manufacturing a semiconductor device with trench gate by using a screen oxide layer | David Laforet | 2018-01-09 |
| 9799738 | Semiconductor device with field electrode and contact structure | Ralf Siemieniec, Oliver Blank, Michael Hutzler, David Laforet, Li Juin Yip | 2017-10-24 |
| 9755066 | Reduced gate charge field-effect transistor | David Laforet, Li Juin Yip | 2017-09-05 |
| 9711660 | JFET and method of manufacturing thereof | Jens Peter Konrath, Hans-Joachim Schulze, Ralf Siemieniec | 2017-07-18 |
| 9680004 | Power MOSFET with seperate gate and field plate trenches | David Laforet, Oliver Blank, Michael Hutzler, Ralf Siemieniec, Li Juin Yip | 2017-06-13 |
| 9666696 | Method of manufacturing a vertical junction field effect transistor | Romain Esteve | 2017-05-30 |
| 9276135 | Junction field effect transistor with vertical PN junction | Ralf Siemieniec | 2016-03-01 |
| 9209318 | Vertical JFET with body diode and device regions disposed in a single compound epitaxial layer | Romain Esteve | 2015-12-08 |