Issued Patents All Time
Showing 1–25 of 45 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 12382677 | Power semiconductor device having nanometer-scale structure | Anton Mauder, Franz-Josef Niedernostheide | 2025-08-05 |
| 12283621 | Semiconductor device having a transistor with trenches and mesas | Caspar Leendertz, Markus Beninger-Bina, Matteo Dainese, Alice Pei-Shan Leendertz | 2025-04-22 |
| 12266680 | Voltage-controlled switching device with resistive path | Anton Mauder, Franz-Josef Niedernostheide | 2025-04-01 |
| 12224316 | Semiconductor device including insulated gate bipolar transistor | Wolfgang Roesner | 2025-02-11 |
| 12074212 | Semiconductor device including a plurality of trenches | Matteo Dainese | 2024-08-27 |
| 11869985 | Diode including a plurality of trenches | Matteo Dainese, Viktoryia Lapidus | 2024-01-09 |
| 11610976 | Semiconductor device including a transistor with one or more barrier regions | Caspar Leendertz, Markus Beninger-Bina, Matteo Dainese, Alice Pei-Shan Leendertz | 2023-03-21 |
| 11581428 | IGBT with dV/dt controllability | Alexander Philippou, Markus Beninger-Bina, Matteo Dainese, Christian Jaeger, Johannes Georg Laven +3 more | 2023-02-14 |
| 11575032 | Vertical power semiconductor device and manufacturing method | Frank Pfirsch, Dorothea Werber | 2023-02-07 |
| 11538906 | Diode with structured barrier region | Johannes Georg Laven, Roman Baburske, Alexander Philippou | 2022-12-27 |
| 11469317 | RC IGBT | Frank Pfirsch, Erich Griebl, Viktoryia Lapidus, Anton Mauder, Antonio Vellei | 2022-10-11 |
| 11444158 | Semiconductor device including an anode contact region having a varied doping concentration | Wolfgang Roesner | 2022-09-13 |
| 11398472 | RC IGBT with an IGBT section and a diode section | Johannes Georg Laven, Roman Baburske, Frank Pfirsch, Alexander Philippou | 2022-07-26 |
| 11296213 | Reverse-conducting igbt having a reduced forward recovery voltage | Wolfgang Roesner, Matteo Dainese | 2022-04-05 |
| 11276772 | Power semiconductor device | Anton Mauder, Franz-Josef Niedernostheide | 2022-03-15 |
| 11264459 | Power semiconductor device | Roman Baburske, Moriz Jelinek, Franz-Josef Niedernostheide, Frank Pfirsch, Hans-Joachim Schulze | 2022-03-01 |
| 11171202 | Power semiconductor device having fully depleted channel regions | Anton Mauder, Franz-Josef Niedernostheide | 2021-11-09 |
| 11038016 | Insulated gate bipolar transistor device having a fin structure | Franz-Josef Niedernostheide, Vera van Treek | 2021-06-15 |
| 11011629 | Power semiconductor switch with improved controllability | Markus Beninger-Bina, Matteo Dainese, Ingo Dirnstorfer, Erich Griebl, Caspar Leendertz | 2021-05-18 |
| 11004963 | Insulated gate bipolar transistor having first and second field stop zone portions and manufacturing method | Oana Julia Spulber, Matthias Kuenle, Wolfgang Roesner, Christoph Weiss | 2021-05-11 |
| 10950718 | IGBT with fully depletable n- and p-channel regions | Anton Mauder, Thomas Kuenzig, Franz-Josef Niedernostheide | 2021-03-16 |
| 10923578 | Semiconductor device comprising a barrier region | Caspar Leendertz, Markus Bina, Matteo Dainese, Alice Pei-Shan Hsieh | 2021-02-16 |
| 10840362 | IGBT with dV/dt controllability | Alexander Philippou, Markus Bina, Matteo Dainese, Christian Jaeger, Johannes Georg Laven +3 more | 2020-11-17 |
| 10748995 | Insulated gate bipolar Transistor device having a fin structure | Franz-Josef Niedernostheide, Vera van Treek | 2020-08-18 |
| 10672767 | Power semiconductor device having different channel regions | Anton Mauder, Franz-Josef Niedernostheide | 2020-06-02 |