Issued Patents All Time
Showing 1–6 of 6 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 11081544 | Method of manufacturing a semiconductor device comprising first and second field stop zone portions | Hans-Joachim Schulze, Franz-Josef Niedernostheide, Stephan Voss | 2021-08-03 |
| 11004963 | Insulated gate bipolar transistor having first and second field stop zone portions and manufacturing method | Matthias Kuenle, Wolfgang Roesner, Christian Philipp Sandow, Christoph Weiss | 2021-05-11 |
| 10734484 | Silicon carbide semiconductor device with trench gate structure and horizontally arranged channel and current spread regions | Andreas Meiser, Anton Mauder, Roland Rupp | 2020-08-04 |
| 10546939 | N-channel bipolar power semiconductor device with P-layer in the drift volume | Roman Baburske, Markus Bina, Hans-Joachim Schulze | 2020-01-28 |
| 10332973 | N-channel bipolar power semiconductor device with p-layer in the drift volume | Roman Baburske, Markus Bina, Hans-Joachim Schulze | 2019-06-25 |
| 9978851 | n-channel bipolar power semiconductor device with p-layer in the drift volume | Roman Baburske, Markus Bina, Hans-Joachim Schulze | 2018-05-22 |