Issued Patents All Time
Showing 1–25 of 122 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 12382677 | Power semiconductor device having nanometer-scale structure | Anton Mauder, Christian Philipp Sandow | 2025-08-05 |
| 12266680 | Voltage-controlled switching device with resistive path | Christian Philipp Sandow, Anton Mauder | 2025-04-01 |
| 12088283 | Actively tracking switching speed control and regulating switching speed of a power transistor during turn-on | Zheming Li, Mark-Matthias Bakran, Daniel Domes, Robert Maier | 2024-09-10 |
| 11876509 | Gate control method of MOS-gated power device | Guang Zeng, Mark-Matthias Bakran, Zheming Li | 2024-01-16 |
| 11848377 | Semiconductor component with edge termination region | Anton Mauder, Hans-Joachim Schulze, Matteo Dainese, Elmar Falck, Manfred Pfaffenlehner | 2023-12-19 |
| 11843368 | Method for reducing oscillation during turn on of a power transistor by regulating the gate switching speed control of its complementary power transistor | Zheming Li, Mark-Matthias Bakran, Daniel Domes, Robert Maier | 2023-12-12 |
| 11770119 | Actively tracking switching speed control and regulating switching speed of a power transistor during turn-on | Zheming Li, Mark-Matthias Bakran, Daniel Domes, Robert Maier | 2023-09-26 |
| 11595035 | Method for reducing oscillation during turn on of a power transistor by regulating the gate switching speed control of its complementary power transistor | Zheming Li, Mark-Matthias Bakran, Daniel Domes, Robert Maier | 2023-02-28 |
| 11444613 | Actively tracking switching speed control and regulating switching speed of a power transistor during turn-on | Zheming Li, Mark-Matthias Bakran, Daniel Domes, Robert Maier | 2022-09-13 |
| 11309410 | Semiconductor device having active and inactive semiconductor mesas | Maria Cotorogea, Frank Wolter, Hans-Joachim Schulze, Yvonne Gawlina-Schmidl | 2022-04-19 |
| 11276772 | Power semiconductor device | Anton Mauder, Christian Philipp Sandow | 2022-03-15 |
| 11264459 | Power semiconductor device | Roman Baburske, Moriz Jelinek, Frank Pfirsch, Christian Philipp Sandow, Hans-Joachim Schulze | 2022-03-01 |
| 11257914 | Semiconductor die, semiconductor device and IGBT module | Vera van Treek, Roman Baburske, Christian Jaeger, Christian Mueller, Frank Pfirsch +2 more | 2022-02-22 |
| 11171202 | Power semiconductor device having fully depleted channel regions | Anton Mauder, Christian Philipp Sandow | 2021-11-09 |
| 11081544 | Method of manufacturing a semiconductor device comprising first and second field stop zone portions | Hans-Joachim Schulze, Oana Julia Spulber, Stephan Voss | 2021-08-03 |
| 11038016 | Insulated gate bipolar transistor device having a fin structure | Christian Philipp Sandow, Vera van Treek | 2021-06-15 |
| 11031929 | Actively tracking switching speed control of a power transistor | Robert Maier, Mark-Matthias Bakran, Daniel Domes, Zheming Li | 2021-06-08 |
| 11018249 | Semiconductor component with edge termination region | Anton Mauder, Hans-Joachim Schulze, Matteo Dainese, Elmar Falck, Manfred Pfaffenlehner | 2021-05-25 |
| 10957764 | Vertical semiconductor device | Manfred Pfaffenlehner, Hans-Joachim Schulze, Holger Schulze, Frank Umbach, Christoph Weiss | 2021-03-23 |
| 10950718 | IGBT with fully depletable n- and p-channel regions | Anton Mauder, Thomas Kuenzig, Christian Philipp Sandow | 2021-03-16 |
| 10943974 | Method for producing a semiconductor component having a channel stopper region | Elmar Falck, Hans-Joachim Schulze | 2021-03-09 |
| 10748995 | Insulated gate bipolar Transistor device having a fin structure | Christian Philipp Sandow, Vera van Treek | 2020-08-18 |
| 10680089 | Semiconductor device having an active trench and a body trench | Maria Cotorogea, Frank Wolter, Hans-Joachim Schulze, Yvonne Gawlina-Schmidl | 2020-06-09 |
| 10672767 | Power semiconductor device having different channel regions | Anton Mauder, Christian Philipp Sandow | 2020-06-02 |
| 10665706 | Power semiconductor transistor | Anton Mauder, Christian Philipp Sandow | 2020-05-26 |