Issued Patents All Time
Showing 51–75 of 122 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 9882038 | Method of manufacturing a bipolar semiconductor switch | Hans-Joachim Schulze | 2018-01-30 |
| 9876004 | Semiconductor component including a short-circuit structure | Hans-Joachim Schulze, Uwe Kellner-Werdehausen, Reiner Barthelmess | 2018-01-23 |
| 9859272 | Semiconductor device with a reduced band gap zone | Hans-Joachim Schulze, Holger Huesken, Frank Pfirsch, Roman Roth, Christian Philipp Sandow +2 more | 2018-01-02 |
| 9859408 | Power semiconductor transistor having fully depleted channel region | Anton Mauder, Christian Philipp Sandow | 2018-01-02 |
| 9825136 | Semiconductor component and integrated circuit | Manfred Pfaffenlehner, Frank Pfirsch, Hans-Joachim Schulze, Holger Schulze, Christoph Weiss | 2017-11-21 |
| 9819341 | Semiconductor devices | Christian Philipp Sandow | 2017-11-14 |
| 9741795 | IGBT having at least one first type transistor cell and reduced feedback capacitance | Christian Philipp Sandow, Hans-Joachim Schulze, Johannes Georg Laven, Frank Pfirsch, Hans Peter Felsl | 2017-08-22 |
| 9741571 | Bipolar transistor device with an emitter having two types of emitter regions | Roman Baburske, Christian Jaeger, Hans-Joachim Schulze, Antonio Vellei | 2017-08-22 |
| 9680005 | Semiconductor device having an active trench and a body trench | Maria Cotorogea, Frank Wolter, Hans-Joachim Schulze, Yvonne Gawlina-Schmidl | 2017-06-13 |
| 9647100 | Semiconductor device with auxiliary structure including deep level dopants | Hans-Joachim Schulze, Christian Jaeger, Roman Baburske, Andre Rainer Stegner, Antonio Vellei | 2017-05-09 |
| 9627517 | Bipolar semiconductor switch and a manufacturing method therefor | Hans-Joachim Schulze | 2017-04-18 |
| 9570607 | Field-effect semiconductor device having alternating n-type and p-type pillar regions arranged in an active area | Hans-Joachim Schulze, Anton Mauder, Joachim Weyers, Franz Hirler, Markus Schmitt +3 more | 2017-02-14 |
| 9536740 | Increasing the doping efficiency during proton irradiation | Hans-Joachim Schulze, Johannes Georg Laven, Frank Pfirsch | 2017-01-03 |
| 9525029 | Insulated gate bipolar transistor device, semiconductor device and method for forming said devices | Christian Philipp Sandow, Vera van Treek | 2016-12-20 |
| 9412854 | IGBT module and a circuit | Hans Peter Felsl, Hans-Joachim Schulze, Thomas Raker | 2016-08-09 |
| 9412824 | Semiconductor component having a dopant region formed by a dopant composed of an oxygen/vacancy complex | Thomas Neidhart, Hans-Joachim Schulze, Werner Schustereder, Alexander Susiti | 2016-08-09 |
| 9373710 | Insulated gate bipolar transistor | Vera van Treek, Frank Pfirsch, Roman Baburske | 2016-06-21 |
| 9269769 | Semiconductor component including a short-circuit structure | Hans-Joachim Schulze, Uwe Kellner-Werdehausen, Reiner Barthelmess | 2016-02-23 |
| 9245943 | Semiconductor body with strained monocrystalline region | Hans-Joachim Schulze, Reinhart Job | 2016-01-26 |
| 9209292 | Charge compensation semiconductor devices | Hans-Joachim Schulze, Anton Mauder, Joachim Weyers, Franz Hirler, Markus Schmitt +3 more | 2015-12-08 |
| 9166027 | IGBT with reduced feedback capacitance | Christian Philipp Sandow, Hans-Joachim Schulze, Johannes Georg Laven, Frank Pfirsch, Hans Peter Felsl | 2015-10-20 |
| 9142655 | Semiconductor device | Maria Cotorogea, Frank Wolter, Hans-Joachim Schulze, Yvonne Gawlina-Schmidl | 2015-09-22 |
| 9105682 | Semiconductor component with improved dynamic behavior | Hans Peter Felsl, Thomas Raker, Hans-Joachim Schulze | 2015-08-11 |
| 9082741 | Semiconductor device including first and second semiconductor materials | Stephan Voss, Hans-Joachim Schulze | 2015-07-14 |
| 9054035 | Increasing the doping efficiency during proton irradiation | Hans-Joachim Schulze, Johannes Georg Laven, Frank Pfirsch | 2015-06-09 |