Issued Patents All Time
Showing 26–50 of 122 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 10580653 | Method of forming a semiconductor device | Johannes Georg Laven, Hans-Joachim Schulze | 2020-03-03 |
| 10566462 | Bipolar semiconductor device and manufacturing method | Hans-Joachim Schulze, Frank Pfirsch | 2020-02-18 |
| 10483384 | Transistor device with high current robustness | Riteshkumar Bhojani, Hans-Joachim Schulze, Josef Lutz, Roman Baburske | 2019-11-19 |
| 10461739 | Transistor device | Thomas Basler, Roman Baburske, Johannes Georg Laven, Hans-Joachim Schulze | 2019-10-29 |
| 10453918 | Power semiconductor device having cells with channel regions of different conductivity types | Anton Mauder, Christian Philipp Sandow | 2019-10-22 |
| 10404250 | Transistor device | Thomas Basler, Roman Baburske, Johannes Georg Laven, Hans-Joachim Schulze | 2019-09-03 |
| 10396074 | Power semiconductor device having different channel regions | Anton Mauder, Christian Philipp Sandow | 2019-08-27 |
| 10388776 | Semiconductor device having an active trench and a body trench | Maria Cotorogea, Frank Wolter, Hans-Joachim Schulze, Yvonne Gawlina-Schmidl | 2019-08-20 |
| 10367057 | Power semiconductor device having fully depleted channel regions | Anton Mauder, Frank Pfirsch, Christian Philipp Sandow | 2019-07-30 |
| 10340336 | Power semiconductor device having fully depleted channel regions | Anton Mauder, Christian Philipp Sandow | 2019-07-02 |
| 10326009 | Power semiconductor transistor having fully depleted channel region | Anton Mauder, Christian Philipp Sandow | 2019-06-18 |
| 10249746 | Bipolar transistor with superjunction structure | Frank Pfirsch, Hans-Joachim Schulze, Stephan Voss | 2019-04-02 |
| 10224206 | Bipolar transistor device with an emitter having two types of emitter regions | Roman Baburske, Christian Jaeger, Hans-Joachim Schulze, Antonio Vellei | 2019-03-05 |
| 10177230 | Semiconductor device including at least one type of deep-level dopant | Stephan Voss, Hans-Joachim Schulze | 2019-01-08 |
| 10141404 | Power semiconductor device having fully depleted channel region | Anton Mauder, Christian Philipp Sandow | 2018-11-27 |
| 10134835 | Power semiconductor device having fully depleted channel regions | Anton Mauder, Frank Pfirsch, Christian Philipp Sandow | 2018-11-20 |
| 10134885 | Semiconductor device having an active trench and a body trench | Maria Cotorogea, Frank Wolter, Hans-Joachim Schulze, Yvonne Gawlina-Schmidl | 2018-11-20 |
| 10109624 | Semiconductor device comprising transistor cell units with different threshold voltages | Markus Bina, Alexander Philippou | 2018-10-23 |
| 10083960 | Power semiconductor device having fully depleted channel regions | Anton Mauder, Christian Philipp Sandow | 2018-09-25 |
| 10069016 | Semiconductor diode with trench structures and including doped layers and doped zones of opposite conductivity types providing high surge energy capacity | Anton Mauder, Hans-Joachim Schulze, Holger Schulze | 2018-09-04 |
| 9997517 | Power semiconductor device having fully depleted channel regions | Anton Mauder, Christian Philipp Sandow | 2018-06-12 |
| 9978837 | Insulated gate bipolar transistor device having a fin structure | Christian Philipp Sandow, Vera van Treek | 2018-05-22 |
| 9947741 | Field-effect semiconductor device having pillar regions of different conductivity type arranged in an active area | Hans-Joachim Schulze, Anton Mauder, Joachim Weyers, Franz Hirler, Markus Schmitt +3 more | 2018-04-17 |
| 9917181 | Bipolar transistor with superjunction structure | Frank Pfirsch, Hans-Joachim Schulze, Stephan Voss | 2018-03-13 |
| 9899377 | Insulated gate semiconductor device with soft switching behavior | Hans-Joachim Schulze, Frank Pfirsch, Francisco Javier Santos Rodriguez, Stephan Voss, Wolfgang Wagner | 2018-02-20 |