Issued Patents All Time
Showing 76–100 of 122 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 9054151 | Semiconductor device with laterally varying doping concentrations | Hans-Joachim Schulze, Yvonne Gawlina | 2015-06-09 |
| 8921931 | Semiconductor device with trench structures including a recombination structure and a fill structure | Anton Mauder, Hans-Joachim Schulze, Holger Schulze | 2014-12-30 |
| 8889531 | Semiconductor device having two monocrystalline semiconductor regions with a different lattice constant and a strained semiconductor region between | Hans-Joachim Schulze, Reinhart Job | 2014-11-18 |
| 8872264 | Semiconductor device having a floating semiconductor zone | Frank Pfirsch, Maria Cotorogea, Franz Hirler, Thomas Raker, Hans-Joachim Schulze +1 more | 2014-10-28 |
| 8859409 | Semiconductor component comprising a dopant region in a semiconductor body and a method for producing a dopant region in a semiconductor body | Thomas Neidhart, Hans-Joachim Schulze, Werner Schustereder, Alexander Susiti | 2014-10-14 |
| 8829562 | Semiconductor device including a dielectric structure in a trench | Hans-Joachim Schulze, Franz Hirler, Hans Peter Felsl | 2014-09-09 |
| 8741750 | Method for fabricating a semiconductor having a graded pn junction | Frank Hille, Hans-Joachim Schulze, Holger Schulze | 2014-06-03 |
| 8653556 | Vertical semiconductor device | Hans-Joachim Schulze | 2014-02-18 |
| 8637328 | Integrated circuit having doped semiconductor body and method | Frank Pfirsch, Hans-Joachim Schulze | 2014-01-28 |
| 8587025 | Method for forming laterally varying doping concentrations and a semiconductor device | Hans-Joachim Schulze, Yvonne Gawlina | 2013-11-19 |
| 8482062 | Semiconductor device having a floating semiconductor zone | Frank Pfirsch, Maria Cotorogea, Franz Hirler, Thomas Raker, Hans-Joachim Schulze +1 more | 2013-07-09 |
| 8415710 | Bipolar power semiconductor component comprising a p-type emitter and more highly doped zones in the p-type emitter, and production method | Hans-Joachim Schulze, Uwe Kellner-Werdehausen, Reiner Barthelmess | 2013-04-09 |
| 8367532 | Semiconductor device and fabrication method | Anton Mauder, Hans-Joachim Schulze, Frank Hille, Holger Schulze, Manfred Pfaffenlehner +1 more | 2013-02-05 |
| 8343862 | Semiconductor device with a field stop zone and process of producing the same | Hans-Joachim Schulze, Frank Pfirsch, Stephan Voss | 2013-01-01 |
| 8264033 | Semiconductor device having a floating semiconductor zone | Frank Pfirsch, Maria Cotorogea, Franz Hirler, Thomas Raker, Hans-Joachim Schulze +1 more | 2012-09-11 |
| 8252671 | Semiconductor device and fabrication method | Anton Mauder, Hans-Joachim Schulze, Frank Hille, Holger Schulze, Manfred Pfaffenlehner +1 more | 2012-08-28 |
| 8236676 | Integrated circuit having doped semiconductor body and method | Frank Pfirsch, Hans-Joachim Schulze | 2012-08-07 |
| 8178411 | Method for producing a stop zone in a semiconductor body and semiconductor component having a stop zone | Reiner Barthelmess, Anton Mauder, Hans-Joachim Schulze | 2012-05-15 |
| 8101506 | Method for producing a buried n-doped semiconductor zone in a semiconductor body and semiconductor component | Hans-Joachim Schulze, Josef Lutz, Ralf Siemieniec | 2012-01-24 |
| 8035195 | Semiconductor element | Manfred Pfaffenlehner, Hans-Joachim Schulze | 2011-10-11 |
| 8034700 | Method of fabricating a diode | Hans-Joachim Schulze, Reiner Barthelmess | 2011-10-11 |
| 8003502 | Semiconductor device and fabrication method | Anton Mauder, Hans-Joachim Schulze, Frank Hille, Holger Schulze, Manfred Pfaffenlehner +1 more | 2011-08-23 |
| 7989888 | Semiconductor device with a field stop zone and process of producing the same | Hans-Joachim Schulze, Frank Pfirsch, Stephan Voss | 2011-08-02 |
| 7884389 | Bipolar power semiconductor component comprising a p-type emitter and more highly doped zones in the p-type emitter, and production method | Hans-Joachim Schulze, Uwe Kellner-Werdehausen, Reiner Barthelmess | 2011-02-08 |
| 7842590 | Method for manufacturing a semiconductor substrate including laser annealing | Thomas Gutt, Frank Umbach, Hans Peter Felsl, Manfred Pfaffenlehner, Holger Schulze | 2010-11-30 |