Issued Patents All Time
Showing 1–20 of 20 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 11018252 | Power semiconductor transistor | Moriz Jelinek, Volodymyr Komarnitskyy, Konrad Schraml, Hans-Joachim Schulze | 2021-05-25 |
| 9741795 | IGBT having at least one first type transistor cell and reduced feedback capacitance | Christian Philipp Sandow, Hans-Joachim Schulze, Johannes Georg Laven, Franz-Josef Niedernostheide, Frank Pfirsch | 2017-08-22 |
| 9412854 | IGBT module and a circuit | Hans-Joachim Schulze, Franz-Josef Niedernostheide, Thomas Raker | 2016-08-09 |
| 9385181 | Semiconductor diode and method of manufacturing a semiconductor diode | Elmar Falck, Manfred Pfaffenlehner, Frank Hille, Andreas Haertl, Holger Schulze +1 more | 2016-07-05 |
| 9349829 | Method of manufacturing a multi-channel HEMT | Clemens Ostermaier, Gerhard Prechtl, Oliver Haeberlen | 2016-05-24 |
| 9293524 | Semiconductor device with a field ring edge termination structure and a separation trench arranged between different field rings | Elmar Falck, Wolfgang Roesener, Andre Rainer Stegner | 2016-03-22 |
| 9166027 | IGBT with reduced feedback capacitance | Christian Philipp Sandow, Hans-Joachim Schulze, Johannes Georg Laven, Franz-Josef Niedernostheide, Frank Pfirsch | 2015-10-20 |
| 9105682 | Semiconductor component with improved dynamic behavior | Thomas Raker, Hans-Joachim Schulze, Franz-Josef Niedernostheide | 2015-08-11 |
| 9048095 | Method for manufacturing a semiconductor device having a channel region in a trench | Anton Mauder, Franz Hirler, Hans-Joachim Schulze | 2015-06-02 |
| 9035355 | Multi-channel HEMT | Clemens Ostermaier, Gerhard Prechtl, Oliver Haeberlen | 2015-05-19 |
| 8872264 | Semiconductor device having a floating semiconductor zone | Frank Pfirsch, Maria Cotorogea, Franz Hirler, Franz-Josef Niedernostheide, Thomas Raker +1 more | 2014-10-28 |
| 8860025 | Semiconductor device and method for manufacturing the semiconductor device | Anton Mauder, Franz Hirler, Hans-Joachim Schulze | 2014-10-14 |
| 8853774 | Semiconductor device including trenches and method of manufacturing a semiconductor device | Maria Cotorogea, Yvonne Gawlina, Francisco Javier Santos Rodriguez, Hans-Joachim Schulze, Georg Seibert +2 more | 2014-10-07 |
| 8829562 | Semiconductor device including a dielectric structure in a trench | Hans-Joachim Schulze, Franz Hirler, Franz-Josef Niedernostheide | 2014-09-09 |
| 8482062 | Semiconductor device having a floating semiconductor zone | Frank Pfirsch, Maria Cotorogea, Franz Hirler, Franz-Josef Niedernostheide, Thomas Raker +1 more | 2013-07-09 |
| 8264033 | Semiconductor device having a floating semiconductor zone | Frank Pfirsch, Maria Cotorogea, Franz Hirler, Franz-Josef Niedernostheide, Thomas Raker +1 more | 2012-09-11 |
| 7915675 | IGBT having one or more stacked zones formed within a second layer of the IGBT | Hans-Joachim Schulze | 2011-03-29 |
| 7842590 | Method for manufacturing a semiconductor substrate including laser annealing | Thomas Gutt, Frank Umbach, Manfred Pfaffenlehner, Franz-Josef Niedernostheide, Holger Schulze | 2010-11-30 |
| 7812427 | Soft switching semiconductor component with high robustness and low switching losses | Anton Mauder, Manfred Pfaffenlehner, Hans-Joachim Schulze | 2010-10-12 |
| 7687891 | Diode having one or more zones of a first conductivity type and one or more zones of a second conductivity type each located within a layer of the second conductivity type | Hans-Joachim Schulze | 2010-03-30 |