Issued Patents All Time
Showing 1–25 of 32 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 12159918 | Group III nitride-based transistor device | Oliver Haeberlen, Gerhard Prechtl, Manuel Stabentheiner | 2024-12-03 |
| 11557670 | Type III-V semiconductor device with improved leakage | Christian Koller, Ingo Daumiller, Lauri Knuuttila | 2023-01-17 |
| 11349012 | Group III nitride-based transistor device and method of fabricating a gate structure for a group III nitride-based transistor device | Oliver Haeberlen, Gerhard Prechtl, Manuel Stabentheiner | 2022-05-31 |
| 11114554 | High-electron-mobility transistor having a buried field plate | Gerhard Prechtl, Oliver Häberlen | 2021-09-07 |
| 10600710 | Semiconductor device | Gerhard Prechtl, Oliver Häberlen | 2020-03-24 |
| 10304923 | Method of forming a vertical potential short in a periphery region of a III-nitride stack for preventing lateral leakage | Gerhard Prechtl, Oliver Häberlen | 2019-05-28 |
| 10199216 | Semiconductor wafer and method | Gerhard Prechtl, Oliver Haeberlen | 2019-02-05 |
| 10177061 | Semiconductor device | Gerhard Prechtl, Oliver Haeberlen | 2019-01-08 |
| 10126355 | Semiconductor probe test card with integrated hall measurement features | Juergen Bostjancic, Gerhard Raczynski, David Kammerlander, Gerhard Prechtl | 2018-11-13 |
| 10128133 | Method of conditioning an etch chamber for contaminant free etching of a semiconductor device | Andreas Haghofer | 2018-11-13 |
| 10090406 | Non-planar normally off compound semiconductor device | Gerhard Prechtl, Oliver Haeberlen | 2018-10-02 |
| 10038085 | High electron mobility transistor with carrier injection mitigation gate structure | Gilberto Curatola, Oliver Haeberlen, Gerhard Prechtl | 2018-07-31 |
| 10038051 | Vertical potential short in the periphery region of a III-nitride stack for preventing lateral leakage | Gerhard Prechtl, Oliver Häberlen | 2018-07-31 |
| 9947600 | Semiconductor structure having a test structure formed in a group III nitride layer | Franz Heider, Bernhard Brunner | 2018-04-17 |
| 9847394 | Semiconductor device | Gerhard Prechtl, Oliver Haeberlen | 2017-12-19 |
| 9837520 | Group III-nitride-based enhancement mode transistor having a multi-heterojunction fin structure | Gerhard Prechtl, Oliver Häberlen | 2017-12-05 |
| 9837522 | III-nitride bidirectional device | Gerhard Prechtl, Oliver Haeberlen | 2017-12-05 |
| 9728470 | Semiconductor structure and methods | Franz Heider, Bernhard Brunner | 2017-08-08 |
| 9728630 | High-electron-mobility transistor having a buried field plate | Gerhard Prechtl, Oliver Haeberlen | 2017-08-08 |
| 9666705 | Contact structures for compound semiconductor devices | Gerhard Prechtl, Oliver Häberlen, Gianmauro Pozzovivo | 2017-05-30 |
| 9647104 | Group III-nitride-based enhancement mode transistor having a heterojunction fin structure | Gerhard Prechtl, Oliver Haeberlen | 2017-05-09 |
| 9590048 | Electronic device | Gerhard Prechtl, Oliver Häberlen | 2017-03-07 |
| 9515162 | Surface treatment of semiconductor substrate using free radical state fluorine particles | Maria Reiner, Peter Lagger, Gerhard Prechtl, Oliver Haeberlen, Josef Schellander +2 more | 2016-12-06 |
| 9412834 | Method of manufacturing HEMTs with an integrated Schottky diode | Gerhard Prechtl, Oliver Haeberlen | 2016-08-09 |
| 9349829 | Method of manufacturing a multi-channel HEMT | Gerhard Prechtl, Oliver Haeberlen, Hans Peter Felsl | 2016-05-24 |