Issued Patents All Time
Showing 1–25 of 145 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 12396249 | RC IGBT and method of producing an RC IGBT | — | 2025-08-19 |
| 12323134 | Semiconductor switching module with insulated gate bipolar transistor and unipolar switching device | Roman Baburske, Jana Hänsel, Katja Waschneck | 2025-06-03 |
| 12068390 | Power semiconductor device having a gate dielectric stack that includes a ferroelectric insulator | — | 2024-08-20 |
| 11610986 | Power semiconductor switch having a cross-trench structure | Matteo Dainese, Alexander Philippou, Markus Beninger-Bina, Ingo Dirnstorfer, Erich Griebl +3 more | 2023-03-21 |
| 11575032 | Vertical power semiconductor device and manufacturing method | Christian Philipp Sandow, Dorothea Werber | 2023-02-07 |
| 11532508 | Semiconductor device having contact layers and manufacturing method | Holger Huesken | 2022-12-20 |
| 11469317 | RC IGBT | Erich Griebl, Viktoryia Lapidus, Anton Mauder, Christian Philipp Sandow, Antonio Vellei | 2022-10-11 |
| 11398472 | RC IGBT with an IGBT section and a diode section | Johannes Georg Laven, Roman Baburske, Alexander Philippou, Christian Philipp Sandow | 2022-07-26 |
| 11289595 | Power semiconductor device and method | — | 2022-03-29 |
| 11264459 | Power semiconductor device | Roman Baburske, Moriz Jelinek, Franz-Josef Niedernostheide, Christian Philipp Sandow, Hans-Joachim Schulze | 2022-03-01 |
| 11257914 | Semiconductor die, semiconductor device and IGBT module | Vera van Treek, Roman Baburske, Christian Jaeger, Christian Mueller, Franz-Josef Niedernostheide +2 more | 2022-02-22 |
| 11251266 | Power semiconductor device and method of processing a power semiconductor device | Philip Christoph Brandt, Manfred Pfaffenlehner, Francisco Javier Santos Rodriguez, Steffen Schmidt, Frank Umbach | 2022-02-15 |
| 11094779 | Semiconductor device having an edge termination region comprising a first edge termination region of a second conductivity type adjacent to a second edge termination region of a first conductivity type | Philip Christoph Brandt, Andre Rainer Stegner, Francisco Javier Santos Rodriguez, Hans-Joachim Schulze, Manfred Pfaffenlehner +1 more | 2021-08-17 |
| 11075290 | Power semiconductor device having a cross-trench arrangement | Matteo Dainese, Alexander Philippou, Markus Bina, Ingo Dirnstorfer, Erich Griebl +3 more | 2021-07-27 |
| 10998399 | Power semiconductor device | Alice Pei-Shan Hsieh, Philip Christoph Brandt, Holger Huesken, Viktoryia Lapidus, Manfred Pfaffenlehner | 2021-05-04 |
| 10950690 | Power electronic arrangement | Thomas Basler | 2021-03-16 |
| 10950494 | Semiconductor device including first and second contact layers and manufacturing method | Holger Huesken | 2021-03-16 |
| 10636900 | High voltage termination structure of a power semiconductor device | Viktoryia Uhnevionak, Philip Christoph Brandt, Frank Hille, Alexandra Ludsteck-Pechloff | 2020-04-28 |
| 10608104 | Trench transistor device | Alexander Philippou, Johannes Georg Laven, Christian Jaeger, Frank Wolter, Antonio Vellei | 2020-03-31 |
| 10566462 | Bipolar semiconductor device and manufacturing method | Hans-Joachim Schulze, Franz-Josef Niedernostheide | 2020-02-18 |
| 10547291 | Circuit with a plurality of transistors and method for controlling such a circuit | Franz Hirler, Anton Mauder | 2020-01-28 |
| 10516065 | Semiconductor devices and methods for forming semiconductor devices | Anton Mauder, Hans-Joachim Schulze, Philipp Seng, Armin Willmeroth | 2019-12-24 |
| 10490656 | Charge-compensation semiconductor device and a manufacturing method therefor | Armin Willmeroth, Franz Hirler, Anton Mauder, Hans-Joachim Schulze, Uwe Wahl | 2019-11-26 |
| 10439025 | Method for producing a semiconductor body having a recombination zone, semiconductor component having a recombination zone, and method for producing such a semiconductor component | Hans-Joachim Schulze | 2019-10-08 |
| 10367057 | Power semiconductor device having fully depleted channel regions | Anton Mauder, Franz-Josef Niedernostheide, Christian Philipp Sandow | 2019-07-30 |